Low Forward Voltage Silicon RF Switching Diode CBI BA592WS in Compact SOD 323 Package for Band Switching Applications
Product Overview
This SILICON RF SWITCHING DIODE, identified by the marking code "W4", is designed for band switching applications in TV/VTR tuners and mobile devices. It features very low forward resistance and small capacitance, making it suitable for high-frequency operations. The diode is housed in a compact SOD-323 package.
Product Attributes
- Marking Code: W4
- Package Type: SOD-323
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Diode Reverse Voltage | VR | - | - | 35 | V | - |
| Forward Current | IF | - | - | 100 | mA | - |
| Junction Temperature | TJ | - | - | 150 | C | - |
| Operating Temperature Range | Top | -55 | - | 125 | C | - |
| Storage Temperature Range | Tstg | -55 | - | 150 | C | - |
| Reverse Current | IR | - | - | 20 | nA | VR = 20 V |
| Forward Voltage | VF | - | - | 1 | V | IF = 100 mA |
| Diode Capacitance | CT | - | 0.65 | 1.4 | pF | VR = 1 V, f = 1 MHz |
| Diode Capacitance | CT | - | 0.6 | 1.1 | pF | VR = 3 V, f = 1 MHz |
| Reverse Parallel Resistance | RP | - | 100 | - | K | VR = 0 V, f = 100 MHz |
| Forward Resistance | rf | - | - | 0.7 | IF = 3 mA, f = 100 MHz | |
| Forward Resistance | rf | - | - | 0.5 | IF = 10 mA, f = 100 MHz | |
| Series Inductance | Ls | - | 1.8 | - | nH | - |
| Symbol | Dimension in Millimeters | Min | Max |
|---|---|---|---|
| A | - | 0.95 | 1.15 |
| A1 | - | 0.010 | 0.100 |
| B | - | 1.20 | 1.40 |
| bp | - | 0.25 | 0.40 |
| C | - | 0.09 | 0.150 |
| E | - | 1.60 | 1.80 |
| HE | - | 2.30 | 2.70 |
| Lp | - | 0.20 | 0.40 |
| - | 0 | 5 |
2410121655_CBI-BA592WS_C5362080.pdf
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