Low Forward Voltage Silicon RF Switching Diode CBI BA592WS in Compact SOD 323 Package for Band Switching Applications

Key Attributes
Model Number: BA592WS
Product Custom Attributes
Reverse Leakage Current (Ir):
20nA@20V
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
35V
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
100mA
Mfr. Part #:
BA592WS
Package:
SOD-323
Product Description

Product Overview

This SILICON RF SWITCHING DIODE, identified by the marking code "W4", is designed for band switching applications in TV/VTR tuners and mobile devices. It features very low forward resistance and small capacitance, making it suitable for high-frequency operations. The diode is housed in a compact SOD-323 package.

Product Attributes

  • Marking Code: W4
  • Package Type: SOD-323
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
Diode Reverse Voltage VR - - 35 V -
Forward Current IF - - 100 mA -
Junction Temperature TJ - - 150 C -
Operating Temperature Range Top -55 - 125 C -
Storage Temperature Range Tstg -55 - 150 C -
Reverse Current IR - - 20 nA VR = 20 V
Forward Voltage VF - - 1 V IF = 100 mA
Diode Capacitance CT - 0.65 1.4 pF VR = 1 V, f = 1 MHz
Diode Capacitance CT - 0.6 1.1 pF VR = 3 V, f = 1 MHz
Reverse Parallel Resistance RP - 100 - K VR = 0 V, f = 100 MHz
Forward Resistance rf - - 0.7 IF = 3 mA, f = 100 MHz
Forward Resistance rf - - 0.5 IF = 10 mA, f = 100 MHz
Series Inductance Ls - 1.8 - nH -
Symbol Dimension in Millimeters Min Max
A - 0.95 1.15
A1 - 0.010 0.100
B - 1.20 1.40
bp - 0.25 0.40
C - 0.09 0.150
E - 1.60 1.80
HE - 2.30 2.70
Lp - 0.20 0.40
- 0 5

2410121655_CBI-BA592WS_C5362080.pdf

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