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quality NPN Surface Mount Transistor CBI MMUN5214DW Dual Bias Resistor with Base Emitter Resistor Integration factory
quality NPN Surface Mount Transistor CBI MMUN5214DW Dual Bias Resistor with Base Emitter Resistor Integration factory

NPN Surface Mount Transistor CBI MMUN5214DW Dual Bias Resistor with Base Emitter Resistor Integration

Key Attributes
Model Number: MMUN5214DW
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN5214DW
Package:
SOT-363
Product Description

Product Overview

The MMUN5211DW Series Dual Bias Resistor Transistors (BRT) are NPN silicon surface mount transistors featuring a monolithic bias resistor network. Each BRT integrates a single transistor with a series base resistor and a base-emitter resistor, effectively replacing discrete components and their associated bias networks. This integration simplifies circuit design, reduces board space, and lowers component count, making them ideal for low-power surface mount applications where space is critical. The series offers various resistor value combinations to suit diverse application needs. These devices comply with RoHS requirements.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material Compliance: RoHS requirements
  • Package Type: SOT-363

Technical Specifications

Model Device Marking R1 (K) R2 (K) Shipping (Units/Reel) DC Current Gain (hFE) Min. (VCE=10V, IC=5mA) Collector Current (IC) Max. Collector-Emitter Voltage (VCEO) Max. Collector-Base Voltage (VCBO) Max. Collector-Emitter Saturation Voltage (VCEsat) Max. (V) Output Voltage (on) (VOL) Max. (V) Output Voltage (off) (VOH) Min. (V)
MMUN5211DW 7A 10 10 3000 35 100 mA 50 V 50 V 0.25 (IC=10mA, IB=0.3mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5212DW 7B 22 22 3000 60 100 mA 50 V 50 V 0.25 (IC=10mA, IB=0.3mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5213DW 7C 47 47 3000 80 100 mA 50 V 50 V 0.25 (IC=10mA, IB=0.3mA) 0.2 (VCC=5V, VB=3.5V, RL=1K) 4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5214DW 7D 10 47 3000 80 100 mA 50 V 50 V 0.25 (IC=10mA, IB=0.3mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.5V, RL=1K)
MMUN5215DW 7E 10 - 3000 160 100 mA 50 V 50 V 0.25 (IC=10mA, IB=5mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5216DW 7F 4.7 - 3000 160 100 mA 50 V 50 V 0.25 (IC=10mA, IB=5mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5230DW 7G 1 1 3000 3 100 mA 50 V 50 V 0.25 (IC=10mA, IB=1mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5231DW 7H 2.2 2.2 3000 8 100 mA 50 V 50 V 0.25 (IC=10mA, IB=1mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5232DW 7J 4.7 4.7 3000 15 100 mA 50 V 50 V 0.25 (IC=10mA, IB=1mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5233DW 7K 4.7 47 3000 80 100 mA 50 V 50 V 0.25 (IC=10mA, IB=1mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5234DW 7L 22 47 3000 80 100 mA 50 V 50 V 0.25 (IC=10mA, IB=1mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5235DW 7M 2.2 47 3000 80 100 mA 50 V 50 V 0.25 (IC=10mA, IB=1mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5238DW 7Q 2.2 - 3000 160 100 mA 50 V 50 V 0.25 (IC=10mA, IB=1mA) 0.2 (VCC=5V, VB=2.5V, RL=1K) 4.9 (VCC=5V, VB=0.25V, RL=1K)
MMUN5241DW 7X 100 - 3000 160 100 mA 50 V 50 V 0.25 (IC=10mA, IB=1mA) 0.2 (VCC=5V, VB=5V, RL=1K) 4.9 (VCC=5V, VB=0.5V, RL=1K)
Characteristic Symbol Value Unit Notes
Total Device Dissipation (One Junction Heated) PD 187 mW TA=25C
Thermal Resistance Junction-to-Ambient (One Junction Heated) RJA 670 C/W FR4 @ Minimum Pad
Total Device Dissipation (One Junction Heated) PD 250 mW TA=25C
Thermal Resistance Junction-to-Ambient (One Junction Heated) RJA 490 C/W FR4 @ 1.0 x 1.0 inch Pad
Total Device Dissipation (Both Junctions Heated) PD 250 mW TA=25C
Thermal Resistance Junction-to-Ambient (Both Junctions Heated) RJA 493 C/W FR4 @ Minimum Pad
Total Device Dissipation (Both Junctions Heated) PD 385 mW TA=25C
Thermal Resistance Junction-to-Ambient (Both Junctions Heated) RJA 325 C/W FR4 @ 1.0 x 1.0 inch Pad
Thermal Resistance Junction-to-Lead RJL 188 C/W Note 1
Thermal Resistance Junction-to-Lead RJL 208 C/W Note 2
Junction and Storage Temperature TJ, Tstg -55 to +150 C
Collector Base Cutoff Current ICBO -100 nA VCB = 50 V
Collector Emitter Cutoff Current ICEO -500 nA VCE = 50 V
Emitter Base Cutoff Current IEBO 0.5 to 4.3 mA VEB = 6 V (See specific models in table)
Collector Base Breakdown Voltage V(BR)CBO 50 V IC = 10 A
Collector Emitter Breakdown Voltage V(BR)CEO 50 V IC = 2 mA

2410121707_CBI-MMUN5214DW_C21714281.pdf
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