Electronic Design Transistor CBI MMBTSC4081W NPN Silicon Epitaxial Planar with Robust Maximum Ratings
Key Attributes
Model Number:
MMBTSC4081W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
180MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
MMBTSC4081W
Package:
SOT-323
Product Description
Product Overview
This NPN Silicon Epitaxial Planar Transistor is designed for various electronic applications. It is subdivided into three groups (Q, R, and S) based on its DC current gain, offering flexibility for different circuit requirements. With robust absolute maximum ratings and key electrical characteristics detailed, this transistor provides reliable performance for demanding electronic designs.
Product Attributes
- Type: NPN Silicon Epitaxial Planar Transistor
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Group | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||||
| Collector Base Voltage | VCBO | 60 | V | ||||
| Collector Emitter Voltage | VCEO | 50 | V | ||||
| Emitter Base Voltage | VEBO | 7 | V | ||||
| Collector Current | IC | 150 | mA | ||||
| Power Dissipation | Ptot | 200 | mW | ||||
| Junction Temperature | Tj | 150 | C | ||||
| Storage Temperature Range | Tstg | -55 | 150 | C | |||
| Characteristics (Ta = 25 C) | |||||||
| DC Current Gain | hFE | Q | 120 | 180 | 270 | - | VCE = 6 V, IC = 1 mA |
| DC Current Gain | hFE | R | 270 | 390 | 560 | - | VCE = 6 V, IC = 1 mA |
| DC Current Gain | hFE | S | - | - | - | - | VCE = 6 V, IC = 1 mA |
| Collector Base Cutoff Current | ICBO | - | - | 0.1 | A | VCB = 60 V | |
| Emitter Base Cutoff Current | IEBO | - | - | 0.1 | A | VEB = 7 V | |
| Collector Base Breakdown Voltage | V(BR)CBO | 60 | - | - | V | IC = 50 A | |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | V | IC = 1 mA | |
| Emitter Base Breakdown Voltage | V(BR)EBO | 7 | - | - | V | IE = 50 A | |
| Collector Emitter Saturation Voltage | VCE(sat) | - | - | 0.4 | V | IC = 50 mA, IB = 5 mA | |
| Transition Frequency | fT | - | 180 | - | MHz | VCE = 12 V, -IE = 2 mA, f = 100 MHz | |
| Collector Output Capacitance | Cob | - | 2 | 3.5 | pF | VCB = 12 V, f = 1 MHz | |
2410121653_CBI-MMBTSC4081W_C2928251.pdf
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