Small SOD523 package silicon switching diode CBI 1SS400WT epitaxial planar type for fast switching
Key Attributes
Model Number:
1SS400WT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500mA
Reverse Leakage Current (Ir):
100nA@80V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
80V
Operating Junction Temperature Range:
-
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
1SS400WT
Package:
SOD-523
Product Description
Product Overview
The 1SS400WT is a silicon epitaxial planar switching diode designed for high-speed switching applications. It features an extremely small surface mounting type and offers high reliability. This diode is suitable for various electronic circuits requiring fast switching performance.
Product Attributes
- Type: Silicon Epitaxial Planar Switching Diode
- Application: High speed switching
- Package Type: SOD-523
- Marking Code: A
Technical Specifications
| Parameter | Symbol | Max. Unit | Value Unit |
|---|---|---|---|
| Peak Reverse Voltage | VRM | 90 V | |
| Reverse Voltage | VR | 80 V | |
| Average Rectified Forward Current | IF(AV) | 100 mA | |
| Peak Forward Current | IFM | 225 mA | |
| Non-repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 500 mA | |
| Junction Temperature | Tj | 150 OC | |
| Storage Temperature Range | Tstg | - 55 to + 150 OC | |
| Forward Voltage at IF = 100 mA | VF | 1.2 V | |
| Reverse Current at VR = 80 V | IR | 0.1 A | |
| Capacitance Between Terminals at VR = 0.5 V, f = 1 MHz | CT | 3 pF | |
| Reverse Recovery Time at VR = 6 V, IF = 10 mA, RL = 100 | trr | 4 ns |
Package Outline (SOD-523)
| UNIT | A | bp | C | D | E | H | V |
|---|---|---|---|---|---|---|---|
| mm | 0.70 - 0.60 | 0.4 - 0.3 | 0.135 - 0.100 | 1.25 - 1.15 | 0.85 - 0.75 | 1.7 - 1.5 | 0.1 |
2410122003_CBI-1SS400WT_C2919749.pdf
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