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quality PNP Transistor CBI 2N2907AU Designed for General Purpose Switching and Audio Frequency Amplification factory
quality PNP Transistor CBI 2N2907AU Designed for General Purpose Switching and Audio Frequency Amplification factory

PNP Transistor CBI 2N2907AU Designed for General Purpose Switching and Audio Frequency Amplification

Key Attributes
Model Number: 2N2907AU
Product Custom Attributes
Current - Collector Cutoff:
10uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
625mW
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
2N2907AU
Package:
SOT-89
Product Description

Product Overview

This PNP Silicon Epitaxial Planar Transistor is designed for switching and AF amplifier applications. It is available in different groups based on its DC current gain, offering versatility for various electronic designs. The transistor is suitable for general-purpose amplification and switching tasks.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Value Unit Conditions
Absolute Maximum Ratings
Collector Base Voltage -VCBO 60 V Ta = 25 OC
Collector Emitter Voltage -VCEO 40, 60 V Ta = 25 OC
Emitter Base Voltage -VEBO 5 V Ta = 25 OC
Collector Current -IC 600 mA Ta = 25 OC
Power Dissipation Ptot 625 mW Ta = 25 OC
Junction Temperature Tj 150 OC
Storage Temperature Range Tstg -55 to +150 OC
Characteristics
DC Current Gain hFE 35-75 - -IC = 0.1 mA, -VCE = 10 V
DC Current Gain hFE 50-100 - -IC = 1 mA, -VCE = 10 V
DC Current Gain hFE 75-100 - -IC = 10 mA, -VCE = 10 V
DC Current Gain hFE 100-300 - -IC = 150 mA, -VCE = 10 V
DC Current Gain hFE 50- - -IC = 500 mA, -VCE = 10 V
Collector Base Cutoff Current -ICBO -20, -10 nA -VCB = 50 V
Collector Base Breakdown Voltage -V(BR)CBO 60 V -IC = 10 A
Collector Emitter Breakdown Voltage -V(BR)CEO 40, 60 V -IC = 10 mA
Emitter Base Breakdown Voltage -V(BR)EBO 5 V -IE = 10 A
Collector Saturation Voltage -VCE(sat) -0.4 V -IC = 150 mA, -IB = 15 mA
Collector Saturation Voltage -VCE(sat) -1.6 V -IC = 500 mA, -IB = 50 mA
Base Saturation Voltage -VBE(sat) -1.3 V -IC = 150 mA, -IB = 15 mA
Base Saturation Voltage -VBE(sat) -2.6 V -IC = 500 mA, -IB = 50 mA
Gain Bandwidth Product fT 200 MHz -IC = 50 mA , -VCE = 20 V, f = 100 MHz
Collector Output Capacitance Cob -8 pF -VCB = 10 V, f = 1 MHz
Turn-on Time ton -45 ns -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA
Delay Time td -10 ns -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA
Rise Time tr -40 ns -VCC = 30 V, -IC = 150 mA, -IB1 = 15 mA
Turn-off Time toff -100 ns -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA
Storage Time ts -80 ns -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA
Fall Time tf -30 ns -VCC = 6 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA
Models
Model Marking
2N2907U 2907
2N2907AU 2907A

2410121447_CBI-2N2907AU_C5362129.pdf

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