86--136 6733 2386
quality SOT23 Package PNP Silicon Epitaxial Planar Transistors CBI MMUN2112 for Drive and Interface Circuits factory
quality SOT23 Package PNP Silicon Epitaxial Planar Transistors CBI MMUN2112 for Drive and Interface Circuits factory

SOT23 Package PNP Silicon Epitaxial Planar Transistors CBI MMUN2112 for Drive and Interface Circuits

Key Attributes
Model Number: MMUN2112
Product Custom Attributes
Emitter-Base Voltage VEBO:
6V
Output Voltage(VO(on)):
200mV
Input Resistor:
22kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN2112
Package:
SOT-23
Product Description

Product Overview

PNP Silicon Epitaxial Planar Transistors designed for switching and interface circuit applications, as well as drive circuit applications. These transistors are housed in a SOT-23 plastic package and feature integrated base and emitter resistors.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-23 Plastic Package
  • Transistor Type: PNP Silicon Epitaxial Planar

Technical Specifications

Model Base Resistor R1 (K) Emitter Resistor R2 (K) Marking DC Current Gain (hFE) (-VCE = 10 V, -IC = 5 mA) Min. Collector Base Cutoff Current (ICBO) (-VCB = 50 V) Max. Collector Emitter Cutoff Current (ICEO) (-VCE = 50 V) Max. Emitter Base Cutoff Current (IEBO) (-VEB = 6 V) Max. Collector Base Breakdown Voltage (V(BR)CBO) (-IC = 10 A) Min. Collector Emitter Breakdown Voltage (V(BR)CEO) (-IC = 2 mA) Min. Collector Emitter Saturation Voltage (VCEsat) (-IC = 10 mA, -IB = 0.3 mA) Max. Collector Emitter Saturation Voltage (VCEsat) (-IC = 10 mA, -IB = 5 mA) Max. Collector Emitter Saturation Voltage (VCEsat) (-IC = 10 mA, -IB = 1 mA) Max. Output Voltage (on) (VCC = 5 V, VB = 2.5 V, RL = 1 K) Max. Output Voltage (on) (VCC = 5 V, VB = 3.5 V, RL = 1 K) Max. Output Voltage (off) (VCC = 5 V, VB = 0.5 V, RL = 1 K) Min. Output Voltage (off) (VCC = 5 V, VB = 0.05 V, RL = 1 K) Min. Output Voltage (off) (VCC = 5 V, VB = 0.25 V, RL = 1 K) Min. Input Resistor R1 (K) Resistor Ratio R1/R2
MMUN2111 10 10 A6A 35 -100 nA -500 nA -0.5 mA -50 V -50 V -0.25 V - - -0.2 V - - - - 7 0.8
MMUN2112 22 22 A6B 60 -100 nA -500 nA -0.2 mA -50 V -50 V -0.25 V - - -0.2 V - - - - 15.4 0.8
MMUN2113 47 47 A6C 80 -100 nA -500 nA -0.1 mA -50 V -50 V - - - - -0.2 V - - - 32.9 0.8
MMUN2114 10 47 A6D 80 -100 nA -500 nA -0.2 mA -50 V -50 V -0.25 V - - -0.2 V - - - - 7 0.17
MMUN2115 10 A6E 160 -100 nA -500 nA -0.9 mA -50 V -50 V - -0.25 V - -0.2 V - - -4.9 V - 7 -
MMUN2116 4.7 A6F 160 -100 nA -500 nA -1.9 mA -50 V -50 V - -0.25 V - -0.2 V - - -4.9 V - 3.3 -
MMUN2130 1 1 A6G 3 -100 nA -500 nA -4.3 mA -50 V -50 V -0.25 V - - -0.2 V - -4.9 V - - 0.7 1.2
MMUN2131 2.2 2.2 A6J 8 -100 nA -500 nA -2.3 mA -50 V -50 V - -0.25 V - -0.2 V - - -4.9 V - 1.5 1.2
MMUN2132 4.7 4.7 A6H 15 -100 nA -500 nA -1.5 mA -50 V -50 V - -0.25 V - -0.2 V - - -4.9 V - 3.3 1.2
MMUN2133 4.7 47 A6K 80 -100 nA -500 nA -0.18 mA -50 V -50 V - -0.25 V - -0.2 V - - - - 3.3 0.17
MMUN2134 22 47 A6L 80 -100 nA -500 nA -0.13 mA -50 V -50 V - -0.25 V - -0.2 V - - - - 15.4 0.25
Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit
Collector Base Voltage -VCBO 50 V
Collector Emitter Voltage -VCEO 50 V
Collector Current -IC 100 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range TS -55 to +150 C

2509181520_CBI-MMUN2112_C51822265.pdf

Related Products
quality Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic factory
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
quality Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating factory
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
quality High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications factory
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
quality YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages factory
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.