High Gain NPN Transistor CBI 2SC1623 with Plastic Surface Mount Package and 50 Volt Breakdown Voltage

Key Attributes
Model Number: 2SC1623
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SC1623
Package:
SOT-23
Product Description

Product Overview

The 2SC1623 is an NPN transistor featuring high DC current gain (hFE=200 Typ) and high voltage capability (VCEO=50V). It is designed for applications requiring efficient amplification and switching.

Product Attributes

  • Marking: L6
  • Package Type: SOT-23
  • Package Outline: Plastic surface mounted package; 3 leads

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base breakdown voltage V(BR)CBO IC=100A, IE=0 60 V
Collector-Emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V
Emitter-Base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
DC current gain hFE VCE=6V, IC=1mA 200 400
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V
Transition frequency fT VCE=6V, IC=10mA 250 MHz
Parameter Value Units
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current -Continuous IC 100 mA
Collector Power Dissipation PC 200 mW
Junction Temperature TJ 150
Storage Temperature Tstg -55-150
Pin Label
1 BASE
2 EMITTER
3 COLLECTOR

2410121251_CBI-2SC1623_C2828449.pdf

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