PNP Silicon Epitaxial Transistor CBI BC856B SOT23 Package Suitable for Switching Amplifier Circuits
Key Attributes
Model Number:
BC856B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-
Mfr. Part #:
BC856B
Package:
SOT-23
Product Description
Product Overview
The BC856...BC860 series are PNP silicon epitaxial transistors designed for switching and amplifier applications. These transistors are housed in a compact SOT-23 plastic package, making them suitable for various electronic circuits where space efficiency is crucial.
Product Attributes
- Package Type: SOT-23 Plastic Package
- Transistor Type: PNP Silicon Epitaxial
- Applications: Switching and Amplifier
Technical Specifications
| Parameter | Symbol | BC856 | BC857, BC860 | BC858, BC859 | Unit | |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | ||||||
| Collector Base Voltage | -VCBO | 80 | 50 | 30 | V | |
| Collector Emitter Voltage | -VCEO | 65 | 45 | 30 | V | |
| Emitter Base Voltage | -VEBO | 5 | V | |||
| Collector Current | -IC | 100 | mA | |||
| Peak Collector Current | -ICM | 200 | mA | |||
| Power Dissipation | Ptot | 200 | mW | |||
| Junction Temperature | Tj | 150 | C | |||
| Storage Temperature Range | Tstg | -65 to +150 | C | |||
| Characteristics (Ta = 25 C) | ||||||
| Collector Base Cutoff Current (-VCB = 30 V) | -ICBO | - | 15 | nA | ||
| Collector Emitter Saturation Voltage (-IC = 10 mA, -IB = 0.5 mA) | -VCE(sat) | - | 0.3 | V | ||
| Collector Emitter Saturation Voltage (-IC = 100 mA, -IB = 5 mA) | -VCE(sat) | - | 0.65 | V | ||
| Base Emitter On Voltage (-IC = 2 mA, -VCE = 5 V) | -VBE(on) | 0.6 | - | V | ||
| Base Emitter On Voltage (-IC = 10 mA, -VCE = 5 V) | -VBE(on) | - | 0.82 | V | ||
| Current Gain Bandwidth Product (-VCE = 5 V, -IC = 10 mA, f = 100 MHz) | fT | 100 | - | MHz | ||
| Output Capacitance (-VCB = 10 V, f = 1 MHz) | Cob | - | 6 | pF | ||
| Noise Figure (BC859, RG = 2 K, f = 30 ~15 KHz) | NF | - | 2 | dB | ||
| Noise Figure (BC856, BC857, BC858, RG = 2 K, f = 1 KHz) | NF | - | 4 | dB | ||
| Noise Figure (BC859, BC860, RG = 2 K, f = 1 KHz) | NF | - | 4 | dB | ||
| DC Current Gain (at -VCE = 5 V, -IC = 2 mA) | ||||||
| Current Gain Group | hFE | Min. | Max. | Min. | Max. | Unit |
| A | hFE | 110 | 220 | - | - | - |
| B | hFE | 130 | 280 | - | - | - |
| C | hFE | 180 | 450 | - | - | - |
| D | hFE | 220 | 450 | - | - | - |
| E | hFE | 300 | 800 | - | - | - |
| F | hFE | 400 | 1000 | - | - | - |
| Breakdown Voltages (at specified conditions) | ||||||
| Collector Base Breakdown Voltage (-IC = 10 A) | -V(BR)CBO | 80 | 50 | 30 | - | V |
| Collector Emitter Breakdown Voltage (-IC = 10 A) | -V(BR)CES | 80 | 50 | 30 | - | V |
| Collector Emitter Breakdown Voltage (-IC = 10 mA) | -V(BR)CEO | 65 | 45 | 30 | - | V |
| Emitter Base Breakdown Voltage (-IE = 1 A) | -V(BR)EBO | 5 | - | V | ||
Package Outline
Plastic surface mounted package; 3 leads SOT-23.
2410121238_CBI-BC856B_C2919765.pdf
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