Schottky barrier diode CBI 1N5817W with 1 amp forward current and fast switching characteristics
Key Attributes
Model Number:
1N5817W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
9A
Reverse Leakage Current (Ir):
1mA@20V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
20V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
750mV@3A
Current - Rectified:
1A
Mfr. Part #:
1N5817W
Package:
SOD-123
Product Description
Product Overview
The 1N5817W-1N5819W series are 1A surface mount Schottky barrier diodes designed for efficient rectification. These diodes feature low forward voltage drop and are suitable for various power supply and switching applications where high speed and low losses are critical. They are packaged in a compact SOD-123 surface mount package.
Product Attributes
- Package Type: SOD-123
Technical Specifications
| Model | Reverse Breakdown Voltage (VBR) Min. (V) | Reverse Current (IR) Max. (mA) | Forward Voltage (VF) Max. (V) | Total Capacitance (Ctot) Max. (pF) |
|---|---|---|---|---|
| 1N5817W | 20 | 1 (at VR = 20 V) | 0.45 (at IF = 0.1 A), 0.75 (at IF = 1 A), 0.9 (at IF = 3 A) | 120 (at VR = 4 V, f = 1 MHz) |
| 1N5818W | 30 | 1 (at VR = 30 V) | 0.45 (at IF = 0.1 A), 0.75 (at IF = 1 A), 0.9 (at IF = 3 A) | 120 (at VR = 4 V, f = 1 MHz) |
| 1N5819W | 40 | 1 (at VR = 40 V) | 0.55 (at IF = 0.1 A), 0.875 (at IF = 1 A), 0.9 (at IF = 3 A) | 120 (at VR = 4 V, f = 1 MHz) |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Average Forward Rectified Current | IF(AV) | 1 | A |
| Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) | IFSM | 9 | A |
| Power Dissipation | Ptot | 450 | mW |
| Operating Temperature Range | Tj | -55 to +125 | C |
| Storage Temperature Range | Tstg | -55 to +125 | C |
Marking Code
- 1N5817W: SJ
- 1N5818W: ME
- 1N5819W: SL
2410121228_CBI-1N5817W_C2828419.pdf
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