Built in Bias Resistors NPN Transistor CBI MMBTRC106SS for Drive Circuits and Switching Applications
Key Attributes
Model Number:
MMBTRC106SS
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
4.7kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMBTRC106SS
Package:
SOT-23
Product Description
Product Overview
This NPN Silicon Epitaxial Planar Transistor is designed for switching and interface circuit applications, as well as drive circuits. Featuring built-in bias resistors, these transistors simplify circuit design and reduce the quantity of parts and manufacturing processes required. They are housed in a SOT-23 plastic package.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23 Plastic Package
Technical Specifications
| Parameter | Symbol | MMBTRC101SS | MMBTRC102SS | MMBTRC103SS | MMBTRC104SS | MMBTRC105SS | MMBTRC106SS | Unit |
|---|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | ||||||||
| Output Voltage | VO | 50 | 50 | 50 | 50 | 12 | 20 | V |
| Input Voltage | VI | 20, -10 | 30, -10 | 40, -10 | 40, -10 | 12, -5 | 20, -5 | V |
| Output Current | IO | 100 | mA | |||||
| Total Power Dissipation | Ptot | 200 | mW | |||||
| Junction Temperature | Tj | 150 | C | |||||
| Storage Temperature Range | Tstg | -55 to +150 | C | |||||
| Resistor Values | ||||||||
| Base R1 (Input) | NA | NB | NC | ND | NF | NE | ||
| R2 (Emitter Common) | 4.7 | 10 | 22 | 47 | 47 | 47 | k | |
| Characteristics (Ta = 25 C) | ||||||||
| DC Current Gain | GI | 30 | 50 | 70 | 80 | 80 | 80 | - |
| (at VO = 5 V, IO = 10 mA) | ||||||||
| Output Cutoff Current | IO(OFF) | 500 | nA | |||||
| (at VO = 50 V) | ||||||||
| Input Current | II | 1.8 | 0.88 | 0.36 | 0.18 | 3.6 | 1.8 | mA |
| (at VI = 5 V) | ||||||||
| Output Voltage | VO(ON) | 0.3 | V | |||||
| (at IO = 10 mA, II = 0.5 mA) | ||||||||
| Input Voltage (ON) | VI(ON) | 2 | 2.4 | 3 | 5 | 1.1 | 1.3 | V |
| (at VO = 0.2 V, IO = 5 mA) | ||||||||
| Input Voltage (OFF) | VI(OFF) | 1 | 1 | 1 | 1 | 0.5 | 0.5 | V |
| (at VO = 5 V, IO = 0.1 mA) | ||||||||
| Transition Frequency | fT 1) | 200 | MHz | |||||
| (at VO = 10 V, IO = 5 mA) | ||||||||
| 1) Characteristic of transistor only. | ||||||||
2509181520_CBI-MMBTRC106SS_C51814068.pdf
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