Durable PNP transistor CBI 2SA1013U with high voltage rating and continuous collector current support
Key Attributes
Model Number:
2SA1013U
Product Custom Attributes
Current - Collector Cutoff:
1uA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
15MHz
Type:
PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
2SA1013U
Package:
SOT-89
Product Description
Product Overview
This PNP transistor is designed for high voltage applications and offers a large continuous collector current capability. It is suitable for various electronic circuits requiring robust performance.
Product Attributes
- Marking: 1013
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: Plastic-Encapsulate Transistors (SOT-89)
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||
| Collector-Base Voltage | VCBO | -160 | V | |
| Collector-Emitter Voltage | VCEO | -160 | V | |
| Emitter-Base Voltage | VEBO | -6 | V | |
| Collector Current (Continuous) | IC | -1 | A | |
| Collector Power Dissipation | PC | 0.5 | W | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55~+150 | ||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||
| Collector-base breakdown voltage | V(BR)CBO | IC=- 100A , IE=0 | -160 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC= -1mA , IB=0 | -160 | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE= -10A, IC=0 | -6 | V |
| Collector cut-off current | ICBO | VCB=-150 V , IE=0 | -1 | A |
| Emitter cut-off current | IEBO | VEB=-6V, IC=0 | -1 | A |
| DC current gain | hFE | VCE=-5 V, IC=- 200mA | 60 - 320 | |
| Collector-emitter saturation voltage | VCE(sat) | IC= -500mA, IB= -50mA | -1.5 | V |
| Base-emitter voltage | VBE | IC= -5 mA, VCE=- 5V | -0.75 | V |
| Transition frequency | fT | VCE= -5 V, IC= -200mA | 15 | MHz |
| CLASSIFICATION OF hFE | ||||
| Rank | Range | |||
| R | 60-120 | |||
| O | 100-200 | |||
| Y | 160-320 | |||
| Thermal Resistance | ||||
| Junction to Ambient | RJA | 250 | /W | |
2410121447_CBI-2SA1013U_C5362136.pdf
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