CBI S8050 0.8A NPN transistor with 0.8A continuous collector current and compact SOT23 surface mount

Key Attributes
Model Number: S8050(0.8A)
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S8050(0.8A)
Package:
SOT-23
Product Description

Product Overview

This NPN transistor is designed for general-purpose applications and is complementary to the S8550. It offers a continuous collector current of 0.8A and a collector dissipation of 0.3W. The device is housed in a plastic surface-mounted SOT-23 package.

Product Attributes

  • Marking: J3Y
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-23

Technical Specifications

Parameter Symbol Test Conditions MIN TYP MAX Units
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 0.8 A
Collector Dissipation PC (TA=25) 0.3 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=40 V, IE=0 0.1 A
Collector cut-off current ICEO VCB=20V, IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
DC current gain HFE(1) VCE=1V, IC= 50mA 200 350
DC current gain HFE(2) VCE=1V, IC= 500mA 50
Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V
Transition frequency fT VCE=6V, IC= 20mA, f=30MHz 150 MHz

Package Outline: Plastic surface mounted package; 3 leads SOT-23

Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR


2410121516_CBI-S8050-0-8A_C5362081.pdf

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