CBI S8050 0.8A NPN transistor with 0.8A continuous collector current and compact SOT23 surface mount
Product Overview
This NPN transistor is designed for general-purpose applications and is complementary to the S8550. It offers a continuous collector current of 0.8A and a collector dissipation of 0.3W. The device is housed in a plastic surface-mounted SOT-23 package.
Product Attributes
- Marking: J3Y
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | Units |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current - Continuous | IC | 0.8 | A | |||
| Collector Dissipation | PC | (TA=25) | 0.3 | W | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40 V, IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCB=20V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V, IC=0 | 0.1 | A | ||
| DC current gain | HFE(1) | VCE=1V, IC= 50mA | 200 | 350 | ||
| DC current gain | HFE(2) | VCE=1V, IC= 500mA | 50 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=500 mA, IB= 50mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=500 mA, IB= 50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=6V, IC= 20mA, f=30MHz | 150 | MHz |
Package Outline: Plastic surface mounted package; 3 leads SOT-23
Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR
2410121516_CBI-S8050-0-8A_C5362081.pdf
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