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quality Lead Free Schottky Barrier Diode Array CBI BAS70TW with Low Forward Voltage Drop and Fast Switching factory
quality Lead Free Schottky Barrier Diode Array CBI BAS70TW with Low Forward Voltage Drop and Fast Switching factory

Lead Free Schottky Barrier Diode Array CBI BAS70TW with Low Forward Voltage Drop and Fast Switching

Key Attributes
Model Number: BAS70TW
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA@50V
Non-Repetitive Peak Forward Surge Current:
100mA
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
70mA
Mfr. Part #:
BAS70TW
Package:
SOT-363
Product Description

Product Overview

This Schottky Barrier Diode Array offers low forward voltage drop and fast switching speeds, making it ideal for transient and ESD protection. It features a PN junction guard ring and is available in a small surface mount package. The device is offered in a lead-free version, catering to environmental and regulatory requirements.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Marking: BAS70BRW, BAS70DW-04, BAS70DW-05, BA S70DW-06, BA S70TW
  • Molding Compound: Green molding compound device (indicated by solid dot), normal device (no solid dot).
  • Package Type: SOT-363 Plastic-Encapsulate Diodes
  • Lead Free Version: Available

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Repetitive Peak Reverse Voltage VRRM 70 V
Peak Working Reverse Voltage VRWM V
DC Blocking Voltage VR V
RMS Reverse Voltage VR(RMS) 49 V
Forward Continuous Current IO 70 mA
Non-repetitive Peak Forward Surge Current IFSM @t=8.3ms 100 mA
Power Dissipation PD 200 mW
Thermal Resistance From Junction To Ambient RJA 500 /W
Operating Junction Temperature Range Tj -40 +125
Storage Temperature Range Tstg -55 +150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Reverse Breakdown Voltage V(BR) IR=10A 70 V
Reverse Current IR VR=50V 0.1 A
Forward Voltage VF IF=1mA 0.41 V
VF IF=15mA 1 V
Total Capacitance Per Diode Ctot VR=0V,f=1MHz 2 pF
Reverse Recovery Time trr IF=IR=10mA to IR=1mA, Irr=0.1IR, RL=100 5 ns
Package Outline Dimensions (Symbol Dimension in Millimeters)
Symbol Min Max
A 0.90 1.00
A1 0.010 0.100
B 1.20 1.40
bp 0.25 0.45
C 0.09 0.15
D 2.00 2.20
E 1.15 1.35
HE 2.15 2.55
Lp 0.25 0.46
0 6

2410122026_CBI-BAS70TW_C21714113.pdf

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