High speed switching diode CBI 1N4148W silicon epitaxial planar type in SOD123 package for circuits
Product Overview
The 1N4148W is a silicon epitaxial planar switching diode designed for fast switching applications. It is available in a SOD-123 package. This diode is also offered in other case styles, including the DO-35 (1N4148), MiniMELF (LL4148), and MicroMELF (MCL4148).
Product Attributes
- Package: SOD-123
- Semiconductor Material: Silicon
- Diode Type: Epitaxial Planar Switching Diode
- Marking Code: " "
Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||
| Peak Reverse Voltage | VRM | 100 | V |
| Reverse Voltage | VR | 75 | V |
| Average Rectified Forward Current | IF(AV) | 150 | mA |
| Non-repetitive Peak Forward Surge Current (t = 1 s) | IFSM | 2 | A |
| Power Dissipation | Ptot | 400 | mW |
| Thermal Resistance from Junction to Ambient Air | RJA | 312 | C/W |
| Junction Temperature | Tj | 150 | C |
| Storage Temperature Range | Tstg | -65 to +150 | C |
| Characteristics (Ta = 25 C) | |||
| Reverse Breakdown Voltage (at IR = 1 A) | V(BR)R | 75 | V |
| Forward Voltage (at IF = 1 mA) | VF | - | V |
| Forward Voltage (at IF = 10 mA) | VF | - | V |
| Forward Voltage (at IF = 50 mA) | VF | 0.715 | V |
| Forward Voltage (at IF = 150 mA) | VF | 1.25 | V |
| Peak Reverse Current (at VR = 75 V) | IR | - | A |
| Peak Reverse Current (at VR = 20 V) | IR | - | nA |
| Peak Reverse Current (at VR = 75 V, TJ = 150 C) | IR | 50 | A |
| Peak Reverse Current (at VR = 25 V, TJ = 150 C) | IR | 30 | A |
| Total Capacitance (at VR = 0 V, f = 1 MHz) | CT | 2 | pF |
| Reverse Recovery Time (at Irr = 0.1 x IR, IF = IR = 10 mA, RL = 100 ) | trr | 4 | ns |
PINNING
| PIN | DESCRIPTION |
|---|---|
| 1 | Cathode |
| 2 | Anode |
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-123
2410121248_CBI-1N4148W_C2828417.pdf
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