86--136 6733 2386
quality Low Frequency NPN Silicon Epitaxial Planar Transistor CBI 2SC4672U DKR Featuring SOT89 Package Design factory
quality Low Frequency NPN Silicon Epitaxial Planar Transistor CBI 2SC4672U DKR Featuring SOT89 Package Design factory

Low Frequency NPN Silicon Epitaxial Planar Transistor CBI 2SC4672U DKR Featuring SOT89 Package Design

Key Attributes
Model Number: 2SC4672U DKR
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
2W
Transition Frequency(fT):
210MHz
Type:
NPN
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
2SC4672U DKR
Package:
SOT-89
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for low-frequency applications. It features a SOT-89 package and is classified into hFE ranks P, Q, and R, with corresponding marking codes DKP, DKQ, and DKR. The transistor offers robust performance with specified absolute maximum ratings and electrical characteristics at 25C.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Package: SOT-89
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Value Unit Notes
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 60 V
Collector Emitter Voltage VCEO 50 V
Emitter Base Voltage VEBO 6 V
Collector Current - DC IC 3 A
Collector Current - Pulse ICP 6 A 1) Single pulse, PW = 10 ms.
Total Power Dissipation Ptot 0.5 W 2) When mounted on a 40 X 40 X 0.7 mm ceramic board.
Total Power Dissipation Ptot 2 W 2) When mounted on a 40 X 40 X 0.7 mm ceramic board.
Junction Temperature TJ 150 C
Storage Temperature Range TStg -55 to +150 C
Characteristics at Ta = 25 C
DC Current Gain at VCE = 2 V, IC = 0.5 A hFE 82 -
DC Current Gain at VCE = 2 V, IC = 1.5 A hFE 45 -
Collector Base Breakdown Voltage at IC = 50 A V(BR)CBO 60 V
Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 50 V
Emitter Base Breakdown Voltage at IE = 50 A V(BR)EBO 6 V
Collector Cutoff Current at VCB = 60 V ICBO 0.1 A
Emitter Cutoff Current at VEB = 5 V IEBO 0.1 A
Collector Emitter Saturation Voltage at IC = 1 A, IB = 50 mA VCE(sat) 0.35 V
Transition Frequency at VCE = 5 V, -IE = 0.5 A, f = 100 MHz fT 210 MHz
Output Capacitance at VCB = 10 V, f = 1 MHz Cob 25 pF
CLASSIFICATION OF hFE RANK
RANK RANGE MARKING
P 82180 DKP
Q 120270 DKQ
R 180390 DKR

2410121642_CBI-2SC4672U-DKR_C5362140.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance factory
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
quality High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics factory
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
quality Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits factory
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
quality Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor factory
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.