Compact Plastic Encapsulated Diode CBI BAV756DW for General Purpose Switching in Electronic Circuits
Key Attributes
Model Number:
BAV756DW
Product Custom Attributes
Reverse Leakage Current (Ir):
2.5uA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
BAV756DW
Package:
SOT-363
Product Description
Product Overview
This plastic-encapsulated diode, model KCA, is designed for general-purpose switching applications. It features a fast switching speed and an ultra-small surface mount package, making it suitable for various electronic circuits requiring efficient and compact components. The diode offers high conductance and is manufactured by Heyuan China Base Electronics Technology Co., Ltd.
Product Attributes
- Brand: KCA
- Encapsulation: Plastic
- Application: General Purpose Switching
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Limit / Conditions | Unit |
|---|---|---|---|
| Maximum Ratings @ Ta=25 | |||
| Peak Repetitive Peak Reverse Voltage | VRRM | 75 | V |
| Working Peak Reverse Voltage | VRWM | 75 | V |
| DC Blocking Voltage | VR | 75 | V |
| Forward Continuous Current | IFM | 300 | mA |
| Average Rectified Output Current | IO | 150 | mA |
| Non-repetitive Peak Forward Current | IFSM | 2 | A |
| Power Dissipation | PD | 200 | mW |
| Thermal Resistance Junction to Ambient | RJA | 625 | /W |
| Operating Junction Temperature | TJ | 150 | |
| Storage Temperature | TSTG | -55~+150 | |
| Electrical Characteristics (Ta=25 unless otherwise specified) | |||
| Reverse breakdown voltage | V(BR) | IR= 2.5A | 75 V |
| Reverse voltage leakage current | IR | VR=75V | 2.5 A |
| VR=20V | 0.025 A | ||
| Forward voltage | VF | IF=1mA | 715 mV |
| IF=10mA | 855 mV | ||
| IF=50mA | 1000 mV | ||
| IF=150mA | 1250 mV | ||
| Total capacitance | Ctot | VR=0, f=1MHz | 2 pF |
| Reverse recovery time | trr | IF=IR=10mA, Irr=0.1IR, RL=100 | 4 ns |
2509181520_CBI-BAV756DW_C51814171.pdf
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