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quality Integrated Resistor NPN Silicon Epitaxial Planar Transistor CBI MMUN2213 for Interface and Drive Circuits factory
quality Integrated Resistor NPN Silicon Epitaxial Planar Transistor CBI MMUN2213 for Interface and Drive Circuits factory

Integrated Resistor NPN Silicon Epitaxial Planar Transistor CBI MMUN2213 for Interface and Drive Circuits

Key Attributes
Model Number: MMUN2213
Product Custom Attributes
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN2213
Package:
SOT-23
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for switching, interface circuit, and drive circuit applications. It features integrated resistors for base and emitter, simplifying external circuitry. Available in a SOT-23 plastic package, these transistors offer reliable performance for various electronic designs.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Silicon Epitaxial Planar
  • Package: SOT-23 Plastic Package

Technical Specifications

Model R1 (K) R2 (K) Marking hFE (VCE=10V, IC=5mA) Min. ICBO (VCB=50V) Max. ICEO (VCE=50V) Max. IEBO (VEB=6V) Max. V(BR)CBO (IC=10A) Min. V(BR)CEO (IC=2mA) Min. VCEsat (IC=10mA, IB=0.3mA) Max. VCEsat (IC=10mA, IB=5mA) Max. VCEsat (IC=10mA, IB=1mA) Max. VOL (VCC=5V, RL=1K) Max. VOH (VCC=5V, RL=1K) Min. R1 (K) R2 (K) R1/R2
MMUN2211 10 10 A8B 35 -100 nA -500 nA 0.5 mA 50 V 50 V - - - 0.2 V 4.9 V 7 10 0.8
MMUN2212 22 22 A8A 60 -100 nA -500 nA 0.2 mA 50 V 50 V - - - 0.2 V 4.9 V 15.4 22 0.8
MMUN2213 47 47 A8C 80 -100 nA -500 nA 0.1 mA 50 V 50 V - - - 0.2 V 4.9 V 32.9 47 0.8
MMUN2214 10 47 A8D 80 -100 nA -500 nA 0.2 mA 50 V 50 V - - - 0.2 V 4.9 V 7 47 0.17
MMUN2215 10 A8E 160 -100 nA -500 nA 0.9 mA 50 V 50 V 0.25 V - - 0.2 V 4.9 V 7 -
MMUN2216 4.7 A8F 160 -100 nA -500 nA 1.9 mA 50 V 50 V 0.25 V - - 0.2 V 4.9 V 3.3 -
MMUN2230 1 1 A8G 3 -100 nA -500 nA 4.3 mA 50 V 50 V 0.25 V 0.25 V - 0.2 V 4.9 V 0.7 1 0.8
MMUN2231 2.2 2.2 A8H 8 -100 nA -500 nA 2.3 mA 50 V 50 V 0.25 V 0.25 V - 0.2 V 4.9 V 1.5 2.2 0.8
MMUN2232 4.7 4.7 A8J 15 -100 nA -500 nA 1.5 mA 50 V 50 V 0.25 V 0.25 V - 0.2 V 4.9 V 3.3 4.7 0.8
MMUN2233 4.7 47 A8K 80 -100 nA -500 nA 0.18 mA 50 V 50 V 0.25 V 0.25 V - 0.2 V 4.9 V 3.3 47 0.055
MMUN2234 22 47 A8L 80 -100 nA -500 nA 0.13 mA 50 V 50 V 0.25 V 0.25 V - 0.2 V 4.9 V 15.4 47 0.38
MMUN2235 2.2 47 A8M 80 -100 nA -500 nA 0.2 mA 50 V 50 V 0.25 V 0.25 V - 0.2 V 4.9 V 1.54 47 0.038
MMUN2238 2.2 A8R 160 -100 nA -500 nA 4 mA 50 V 50 V 0.25 V - - 0.2 V 4.9 V 1.54 -
MMUN2241 100 A8U 160 -100 nA -500 nA 0.1 mA 50 V 50 V - - - 0.2 V 4.9 V 70 -
Parameter Symbol Value Unit
Collector Base Voltage VCBO 50 V
Collector Emitter Voltage VCEO 50 V
Collector Current IC 100 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range TS -55 to +150 C

2509181520_CBI-MMUN2213_C51822184.pdf

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