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quality Built-in Bias Resistors PNP Digital Transistor CBI DTA114TUA for Easy Inverter Circuit Implementation factory
quality Built-in Bias Resistors PNP Digital Transistor CBI DTA114TUA for Easy Inverter Circuit Implementation factory

Built-in Bias Resistors PNP Digital Transistor CBI DTA114TUA for Easy Inverter Circuit Implementation

Key Attributes
Model Number: DTA114TUA
Product Custom Attributes
Mfr. Part #:
DTA114TUA
Package:
SOT-323
Product Description

Product Overview

The DTA114TE/DTA114TUA/DTA114TKA/DTA114TCA are PNP digital transistors featuring built-in bias resistors. This integrated design simplifies circuit configuration by eliminating the need for external input resistors, enabling inverter circuits with ease. The thin-film bias resistors offer complete isolation and minimize parasitic effects, making device design straightforward by only requiring the setting of on/off conditions. These transistors are suitable for applications where simplified digital logic implementation is desired.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: Digital Transistor (PNP)
  • Features: Built-in bias resistors, simplified inverter circuit configuration, isolated thin-film resistors, minimal parasitic effects.

Technical Specifications

Part Number MARKING Package Packing Method Pack Quantity Pin Configuration (Example: DTA114TE)
DTA114TE 94 SOT-523 Reel 3000pcs/Reel 1. IN, 2. GND, 3. OUT
DTA114TUA 94 SOT-323 Reel 3000pcs/Reel 1. IN, 2. GND, 3. OUT
DTA114TKA 94 SOT-23-3L Reel 3000pcs/Reel 1. IN, 2. GND, 3. OUT
DTA114TCA 94 SOT-23 Reel 3000pcs/Reel 1. IN, 2. GND, 3. OUT
Symbol Parameter Conditions Min Typ Max Unit Notes (DTA114T)
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -100 mA
PD Power Dissipation 150 (DTA114TE) / 200 (DTA114TCA/TUA/TKA) mW
TJ,Tstg Operation Junction and Storage Temperature Range -55 +150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
V(BR)CBO Collector-base breakdown voltage IC=-50A, IE=0 -50 V
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA, IB=0 -50 V
V(BR)EBO Emitter-base breakdown voltage IE=-50A, IC=0 -5 V
ICBO Collector cut-off current VCB=-50V, IE=0 -0.1 -0.5 A
IEBO Emitter cut-off current VEB=-4V, IC=0 -0.1 -0.5 A
hFE DC current gain VCE=-5V, IC=-1mA 100 250 600
VCE(sat) Collector-emitter saturation voltage IC=-10mA, IB=-1mA -0.1 -0.3 V
fT Transition frequency VCE=-10V, IE=5mA, f=100MHz 250 MHz
R1 Input resistor 7 10 13 k

2509181520_CBI-DTA114TUA_C51822177.pdf

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