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quality Silicon Epitaxial Planar NPN Transistor CBI MMUN2234 with Integrated Base Emitter Resistors in SOT23 factory
quality Silicon Epitaxial Planar NPN Transistor CBI MMUN2234 with Integrated Base Emitter Resistors in SOT23 factory

Silicon Epitaxial Planar NPN Transistor CBI MMUN2234 with Integrated Base Emitter Resistors in SOT23

Key Attributes
Model Number: MMUN2234
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMUN2234
Package:
SOT-23
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for switching and interface circuit applications, as well as drive circuit applications. It is housed in a SOT-23 plastic package and features integrated base and emitter resistors.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Silicon Epitaxial Planar
  • Package: SOT-23 Plastic Package

Technical Specifications

Model R1 (K) R2 (K) Marking hFE (Min) hFE (Max) ICBO (Max) ICEO (Max) IEBO (Max) VCEsat (V) (Typical) VOL (V) (Typical) VOH (V) (Typical)
MMUN2211 10 10 A8B 35 - 100 nA 500 nA 0.5 mA 0.25 V (IC=10mA, IB=0.3mA) 0.2 V 4.9 V
MMUN2212 22 22 A8A 60 - 100 nA 500 nA 0.2 mA 0.25 V (IC=10mA, IB=0.3mA) 0.2 V 4.9 V
MMUN2213 47 47 A8C 80 - 100 nA 500 nA 0.1 mA - 0.2 V 4.9 V
MMUN2214 10 47 A8D 80 - 100 nA 500 nA 0.2 mA 0.25 V (IC=10mA, IB=0.3mA) 0.2 V 4.9 V
MMUN2215 10 A8E 160 - 100 nA 500 nA 0.9 mA 0.25 V (IC=10mA, IB=5mA) 0.2 V 4.9 V
MMUN2216 4.7 A8F 160 - 100 nA 500 nA 1.9 mA 0.25 V (IC=10mA, IB=5mA) 0.2 V 4.9 V
MMUN2230 1 1 A8G 3 - 100 nA 500 nA 4.3 mA 0.25 V (IC=10mA, IB=0.3mA) 0.2 V 4.9 V
MMUN2231 2.2 2.2 A8H 8 - 100 nA 500 nA 2.3 mA 0.25 V (IC=10mA, IB=0.3mA) 0.2 V 4.9 V
MMUN2232 4.7 4.7 A8J 15 - 100 nA 500 nA 1.5 mA 0.25 V (IC=10mA, IB=5mA) 0.2 V 4.9 V
MMUN2233 4.7 47 A8K 80 - 100 nA 500 nA 0.18 mA 0.25 V (IC=10mA, IB=5mA) 0.2 V 4.9 V
MMUN2234 22 47 A8L 80 - 100 nA 500 nA 0.13 mA 0.25 V (IC=10mA, IB=5mA) 0.2 V 4.9 V
MMUN2235 2.2 47 A8M 80 - 100 nA 500 nA 0.2 mA 0.25 V (IC=10mA, IB=5mA) 0.2 V 4.9 V
MMUN2238 2.2 A8R 160 - 100 nA 500 nA 4 mA 0.25 V (IC=10mA, IB=5mA) 0.2 V 4.9 V
MMUN2241 100 A8U 160 - 100 nA 500 nA 0.1 mA - 0.2 V 4.9 V
Parameter Symbol Value Unit
Collector Base Voltage VCBO 50 V
Collector Emitter Voltage VCEO 50 V
Collector Current IC 100 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range TS -55 to +150 C
Collector Base Breakdown Voltage V(BR)CBO 50 V
Collector Emitter Breakdown Voltage V(BR)CEO 50 V
Dimension Symbol Min (mm) Max (mm)
A 0.90 1.10
A1 0.013 0.100
B 1.80 2.00
bp 0.35 0.50
C 0.09 0.150
D 2.80 3.00
E 1.20 1.40
HE 2.20 2.80
Lp 0.20 0.50
0 5

2410121447_CBI-MMUN2234_C21714261.pdf

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