86--136 6733 2386
quality NPN digital transistor CBI DTC124EKA featuring thin film bias resistors for reduced parasitic effects factory
quality NPN digital transistor CBI DTC124EKA featuring thin film bias resistors for reduced parasitic effects factory

NPN digital transistor CBI DTC124EKA featuring thin film bias resistors for reduced parasitic effects

Key Attributes
Model Number: DTC124EKA
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
28.6kΩ
Resistor Ratio:
1
Mfr. Part #:
DTC124EKA
Package:
SOT-23-3L
Product Description

Product Overview

The DTC124EE is a digital transistor (NPN) featuring built-in bias resistors. This integration simplifies circuit design by eliminating the need for external input resistors, enabling inverter circuit configuration directly. The thin-film bias resistors offer complete isolation, allowing for negative input biasing and minimizing parasitic effects. Operation is straightforward, requiring only the setting of on/off conditions, making device design more efficient.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: Digital Transistor (NPN)
  • Resistor Type: Thin-film resistors

Technical Specifications

Part Number MARKING Package Packing Method Pack Quantity
DTC124EE 25 SOT-523 Reel 3000pcs/Reel
DTC124EUA 25 SOT-323 Reel 3000pcs/Reel
DTC124EKA 25 SOT-23-3L Reel 3000pcs/Reel
DTC124ECA 25 SOT-23 Reel 3000pcs/Reel
Symbol Parameter Limits (DTC124E) Unit M E UA KA CA SA
VCC Supply Voltage V 50
VIN Input Voltage V -10+40
IO Output Current mA 30
ICM Peak Collector Current mA 100
PD Power Dissipation mW 100 150 200 200 300
TJ, Tstg Operation Junction and Storage Temperature Range -55+150
Parameter Symbol Conditions Min Typ Max Unit
Input voltage (off) VI(off) VCC=5V, IO=100A 0.5 V
Input voltage (on) VI(on) VO=0.2V, IO=5mA 3 V
Output voltage (on) VO(on) IO/II=10mA/0.5mA 0.1 0.3 V
Input current II VI=5V 0.36 mA
Output current (off) IO(off) VCC=50V, VI=0 0.5 A
DC current gain GI VO=5V, IO=5mA 56
Input resistance R1 15.4 22 28.6
Resistance ratio R2/R1 0.8 1 1.2
Transition frequency fT VO=10V, IO=5mA, f=100MHz 250 MHz
pF mW
Parameter Symbol Conditions Value Unit
Output Capacitance CO f=1MHz, Ta=25 See graph
Power Dissipation PD Ta=25 See graph

2509011105_CBI-DTC124EKA_C51315351.pdf

Related Products
quality IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes factory
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
quality Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing factory
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
quality Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating factory
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
quality N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities factory
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.