Fast switching Schottky diode CBI BAS70 04 with low turn on voltage and ESD protection in SOT 23 package

Key Attributes
Model Number: BAS70-04
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100mA
Reverse Leakage Current (Ir):
100nA@50V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
70mA
Mfr. Part #:
BAS70-04
Package:
SOT-23
Product Description

Product Overview

The BAS70 series of surface mount Schottky barrier diodes are designed for applications requiring low turn-on voltage and fast switching speeds. These diodes feature a PN junction guard ring for enhanced transient and ESD protection. Available in the SOT-23 plastic package, they are suitable for various electronic circuits.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-23 Plastic Package

Technical Specifications

Model Marking Code Features
BAS70 73 Low turn-on voltage, Fast switching, PN junction guard ring for transient and ESD protection
BAS70-04 74 Low turn-on voltage, Fast switching, PN junction guard ring for transient and ESD protection
BAS70-05 75 Low turn-on voltage, Fast switching, PN junction guard ring for transient and ESD protection
BAS70-06 76 Low turn-on voltage, Fast switching, PN junction guard ring for transient and ESD protection
Parameter Symbol Value Unit Condition
Repetitive Peak Reverse Voltage VRRM 70 V
Non-Repetitive Peak Reverse Voltage VRSM 70 V
Maximum DC Blocking Voltage VR 70 V
Average Forward Rectified Current IF(AV) 70 mA
Peak Forward Surge Current IFSM 100 mA (t < 10 ms)
Power Dissipation PD 200 mW
Thermal Resistance Junction to Ambient Air RJA 625 °C/W
Operating Junction Temperature Range Tj -55 to +125 °C
Storage Temperature Range Tstg -65 to +150 °C
Forward Voltage VF - V at IF = 1 mA
Forward Voltage VF - 0.41 V at IF = 15 mA
Forward Voltage VF - 1 V at IF = 15 mA
Reverse Breakdown Voltage V(BR)R 70 V at IR = 10 µA
Reverse Current IR - 100 nA at VR = 50 V
Total Capacitance CT - 2 pF at VR = 0 , f = 1 MHz
Reverse Recovery Time trr - 5 ns at IF = IR = 10 mA to IR = 1 mA, RL = 100 Ω
Symbol Dimension in Millimeters (Min) Dimension in Millimeters (Max)
A 0.90 1.10
A1 0.013 0.100
B 1.80 2.00
bp 0.35 0.50
C 0.09 0.150
D 2.80 3.00
E 1.20 1.40
HE 2.20 2.80
Lp 0.20 0.50
θ

2410121538_CBI-BAS70-04_C5362083.pdf

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