Fast switching Schottky diode CBI BAS70 04 with low turn on voltage and ESD protection in SOT 23 package
Product Overview
The BAS70 series of surface mount Schottky barrier diodes are designed for applications requiring low turn-on voltage and fast switching speeds. These diodes feature a PN junction guard ring for enhanced transient and ESD protection. Available in the SOT-23 plastic package, they are suitable for various electronic circuits.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23 Plastic Package
Technical Specifications
| Model | Marking Code | Features |
|---|---|---|
| BAS70 | 73 | Low turn-on voltage, Fast switching, PN junction guard ring for transient and ESD protection |
| BAS70-04 | 74 | Low turn-on voltage, Fast switching, PN junction guard ring for transient and ESD protection |
| BAS70-05 | 75 | Low turn-on voltage, Fast switching, PN junction guard ring for transient and ESD protection |
| BAS70-06 | 76 | Low turn-on voltage, Fast switching, PN junction guard ring for transient and ESD protection |
| Parameter | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 70 | V | |
| Non-Repetitive Peak Reverse Voltage | VRSM | 70 | V | |
| Maximum DC Blocking Voltage | VR | 70 | V | |
| Average Forward Rectified Current | IF(AV) | 70 | mA | |
| Peak Forward Surge Current | IFSM | 100 | mA | (t < 10 ms) |
| Power Dissipation | PD | 200 | mW | |
| Thermal Resistance Junction to Ambient Air | RJA | 625 | °C/W | |
| Operating Junction Temperature Range | Tj | -55 to +125 | °C | |
| Storage Temperature Range | Tstg | -65 to +150 | °C | |
| Forward Voltage | VF | - | V | at IF = 1 mA |
| Forward Voltage | VF | - 0.41 | V | at IF = 15 mA |
| Forward Voltage | VF | - 1 | V | at IF = 15 mA |
| Reverse Breakdown Voltage | V(BR)R | 70 | V | at IR = 10 µA |
| Reverse Current | IR | - | 100 nA | at VR = 50 V |
| Total Capacitance | CT | - | 2 pF | at VR = 0 , f = 1 MHz |
| Reverse Recovery Time | trr | - | 5 ns | at IF = IR = 10 mA to IR = 1 mA, RL = 100 Ω |
| Symbol | Dimension in Millimeters (Min) | Dimension in Millimeters (Max) |
|---|---|---|
| A | 0.90 | 1.10 |
| A1 | 0.013 | 0.100 |
| B | 1.80 | 2.00 |
| bp | 0.35 | 0.50 |
| C | 0.09 | 0.150 |
| D | 2.80 | 3.00 |
| E | 1.20 | 1.40 |
| HE | 2.20 | 2.80 |
| Lp | 0.20 | 0.50 |
| θ | 0º | 5º |
2410121538_CBI-BAS70-04_C5362083.pdf
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