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quality Silicon Epitaxial Planar Transistor Series Featuring CBI MMBTRA106SS for Drive Circuit and Switching factory
quality Silicon Epitaxial Planar Transistor Series Featuring CBI MMBTRA106SS for Drive Circuit and Switching factory

Silicon Epitaxial Planar Transistor Series Featuring CBI MMBTRA106SS for Drive Circuit and Switching

Key Attributes
Model Number: MMBTRA106SS
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
4.7kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMBTRA106SS
Package:
SOT-23
Product Description

Product Overview

This series of PNP Silicon Epitaxial Planar Transistors is designed for switching and interface circuit applications, as well as drive circuit applications. They offer a range of models with varying characteristics for diverse electronic designs.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: PNP Silicon Epitaxial Planar Transistor

Technical Specifications

Model R1 (K) R2 (K) Base (Input) Collector (Output) Emitter (Common)
MMBTRA101SS 4.101 7.47 Input Output Common
MMBTRA102SS 1.102 0.10 Input Output Common
MMBTRA103SS 2.103 2.22 Input Output Common
MMBTRA104SS 4.104 7.47 Input Output Common
MMBTRA105SS 2.105 2.47 Input Output Common
MMBTRA106SS 4.106 7.47 Input Output Common
Parameter Symbol Value Unit Notes
Absolute Maximum Ratings (Ta = 25 C)
Output Voltage -VO 50 V
Input Voltage -VI 20, -10 (MMBTRA101SS) V
Input Voltage -VI 30, -10 (MMBTRA102SS) V
Input Voltage -VI 40, -10 (MMBTRA103SS) V
Input Voltage -VI 40, -10 (MMBTRA104SS) V
Input Voltage -VI 12, -5 (MMBTRA105SS) V
Input Voltage -VI 20, -5 (MMBTRA106SS) V
Output Current -IO 100 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 to +150 C
Characteristics (Ta = 25 C)
DC Current Gain GI 30 (MMBTRA101SS) - at -VO = 5 V, -IO = 10 mA
DC Current Gain GI 50 (MMBTRA102SS) - at -VO = 5 V, -IO = 10 mA
DC Current Gain GI 70 (MMBTRA103SS) - at -VO = 5 V, -IO = 10 mA
DC Current Gain GI 80 (MMBTRA104SS) - at -VO = 5 V, -IO = 10 mA
DC Current Gain GI 80 (MMBTRA105SS) - at -VO = 5 V, -IO = 10 mA
DC Current Gain GI 80 (MMBTRA106SS) - at -VO = 5 V, -IO = 10 mA
Output Cutoff Current -IO(OFF) 500 nA at -VO = 50 V
Input Current -II 1.8 (MMBTRA101SS) mA at -VI = 5 V
Input Current -II 0.88 (MMBTRA102SS) mA at -VI = 5 V
Input Current -II 0.36 (MMBTRA103SS) mA at -VI = 5 V
Input Current -II 0.18 (MMBTRA104SS) mA at -VI = 5 V
Input Current -II 3.6 (MMBTRA105SS) mA at -VI = 5 V
Input Current -II 1.8 (MMBTRA106SS) mA at -VI = 5 V
Output Voltage -VO(ON) 0.3 V at -IO = 10 mA, -II = 0.5 mA
Input Voltage (ON) -VI(ON) 2 (MMBTRA101SS) V at -VO = 0.2 V, -IO = 5 mA
Input Voltage (ON) -VI(ON) 2.4 (MMBTRA102SS) V at -VO = 0.2 V, -IO = 5 mA
Input Voltage (ON) -VI(ON) 3 (MMBTRA103SS) V at -VO = 0.2 V, -IO = 5 mA
Input Voltage (ON) -VI(ON) 5 (MMBTRA104SS) V at -VO = 0.2 V, -IO = 5 mA
Input Voltage (ON) -VI(ON) 1.1 (MMBTRA105SS) V at -VO = 0.2 V, -IO = 5 mA
Input Voltage (ON) -VI(ON) 1.3 (MMBTRA106SS) V at -VO = 0.2 V, -IO = 5 mA
Input Voltage (OFF) -VI(OFF) 1 V at -VO = 5 V, -IO = 0.1 mA (MMBTRA101SS~104SS)
Input Voltage (OFF) -VI(OFF) 0.5 V at -VO = 5 V, -IO = 0.1 mA (MMBTRA105SS~106SS)
Transition Frequency fT 200 MHz 1) Characteristic of transistor only. at -VO = 10 V, -IO = 5 mA

2509181520_CBI-MMBTRA106SS_C51814159.pdf

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