General purpose diode CBI BAS21TW plastic encapsulated for switching and signal manipulation circuits

Product Overview

A high-performance switching diode designed for general-purpose switching applications. It offers a fast switching speed and high conductance, making it suitable for various electronic circuits requiring efficient signal manipulation. This diode is a plastic-encapsulated component.

Product Attributes

• Brand: Heyuan China Base Electronics Technology Co., Ltd.
• Packaging: Plastic-Encapsulate Diodes
• Package Type: SOT-363
• Marking: XJK
• Pin 1 Indicator: Solid dot

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition
Peak repetitive peak reverse voltage	VRRM	250	V
Working peak reverse voltage	VRWM	250	V
DC blocking voltage	VR	250	V
Forward continuous current	IFM	400	mA
Average rectified output current	IO	200	mA
Non-repetitive peak forward surge current	IFSM	2.5	A	@ t = 8.3ms
Repetitive peak forward surge current	IFRM	625	mA
Power dissipation	PD	225	mW
Thermal resistance from junction to ambient	RJA	555	C/W
Operating junction and storage temperature range	Tj, Tstg	-55 ~ 150	C
Reverse breakdown voltage	VBR	250	V	IR = 100A
Forward voltage	VF1	-	V	IF = 100mA
Forward voltage	VF2	-	V	IF = 200mA
Reverse current	IR	-	A	VR = 200V
Capacitance between terminals	CT	-	pF	VR = 0V, f = 1MHz
Reverse recovery time	trr	-	ns	IF = IR = 30mA, Irr = 3mA, RL = 100

2509181520_CBI-BAS21TW_C51814060.pdf