NPN Digital Transistor CBI DTC114TUA Featuring Built in Bias Resistors and Isolation for Enhanced Circuit Reliability
Key Attributes
Model Number:
DTC114TUA
Product Custom Attributes
Mfr. Part #:
DTC114TUA
Package:
SOT-323
Product Description
Product Overview
The DTC114TE/DTC114TUA/DTC114TKA/DTC114TCA are NPN digital transistors featuring built-in bias resistors. This configuration eliminates the need for external input resistors, simplifying circuit design and allowing for inverter circuit configurations. The integrated thin-film resistors offer complete isolation, enabling negative input biasing and minimizing parasitic effects. These devices are designed for easy operation, requiring only the setting of on/off conditions.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Type: DIGITAL TRANSISTOR (NPN)
Technical Specifications
| Model | Package | Pin Connections (1. IN, 2. GND, 3. OUT) | Marking |
|---|---|---|---|
| DTC114TE | SOT-523 | 1. IN, 2. GND, 3. OUT | 04 |
| DTC114TUA | SOT-323 | 1. IN, 2. GND, 3. OUT | 04 |
| DTC114TKA | SOT-23-3L | 1. IN, 2. GND, 3. OUT | 04 |
| DTC114TCA | SOT-23 | 1. IN, 2. GND, 3. OUT | 04 |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCBO | Collector-Base Voltage | (DTC114T) | 50 | V | ||
| (DTC114TE) | ||||||
| (DTC114TUA/TKA/TCA) | ||||||
| VCEO | Collector-Emitter Voltage | (DTC114T) | 50 | V | ||
| (DTC114TE) | ||||||
| (DTC114TUA/TKA/TCA) | ||||||
| VEBO | Emitter-Base Voltage | (DTC114T) | 5 | V | ||
| (DTC114TE) | ||||||
| (DTC114TUA/TKA/TCA) | ||||||
| IC | Collector Current - Continuous | (DTC114T) | 100 | mA | ||
| (DTC114TE) | ||||||
| (DTC114TUA/TKA/TCA) | ||||||
| PD | Power Dissipation | DTC114TE | 150 | mW | ||
| DTC114TCA/TUA/TKA | 200 | mW | ||||
| (DTC114TE) | ||||||
| (DTC114TUA/TKA/TCA) | ||||||
| TJ,Tstg | Operation Junction and Storage Temperature Range | (DTC114T) | -55 | +150 | ||
| (DTC114TE) | ||||||
| (DTC114TUA/TKA/TCA) | ||||||
| V(BR)CBO | Collector-base breakdown voltage | Ic=50A,IE=0 | 50 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | Ic=1mA,IB=0 | 50 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=50A,IC=0 | 5 | V | ||
| ICBO | Collector cut-off current | VCB=50V,IE=0 | 0.5 | A | ||
| IEBO | Emitter cut-off current | VEB=4V,IC=0 | 0.5 | A | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=10mA,IB=1mA | 0.3 | V | ||
| hFE | DC current gain | VCE=5V,IC=1mA | 100 | |||
| R1 | Input resistor | 7 | 10 | 13 | k | |
| fT | Transition frequency | VCE=10V,IE=-5mA, f=100MHz | 250 | MHz |
2510101615_CBI-DTC114TUA_C51315343.pdf
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