Schottky Barrier Diode CBI 1N5818W Surface Mount Package Suitable for Power Supply and Rectification
Key Attributes
Model Number:
1N5818W
Product Custom Attributes
Reverse Leakage Current (Ir):
1mA@30V
Non-Repetitive Peak Forward Surge Current:
9A
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
550mV@1A
Current - Rectified:
1A
Mfr. Part #:
1N5818W
Package:
SOD-123
Product Description
Product Overview
The 1N5817W-1N5819W series are 1A surface mount Schottky barrier diodes designed for various electronic applications. These diodes offer efficient rectification with low forward voltage drop and fast switching speeds, making them suitable for power supply circuits, switching applications, and general-purpose rectification where high efficiency is required.
Product Attributes
- Package Type: SOD-123
- Mounting Type: Surface Mount
Technical Specifications
| Parameter | Symbol | 1N5817W | 1N5818W | 1N5819W | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||
| Reverse Breakdown Voltage | V(BR)R | 20 | 30 | 40 | V |
| Reverse Current at VR = 20 V | IR | 1 | - | - | mA |
| Reverse Current at VR = 30 V | IR | - | 1 | - | mA |
| Reverse Current at VR = 40 V | IR | - | - | 1 | mA |
| Reverse Current at VR = 4 V | IR | - | - | 0.05 | mA |
| Reverse Current at VR = 6 V | IR | - | - | 0.075 | mA |
| Forward Voltage at IF = 0.1 A | VF | - | - | 0.45 | V |
| Forward Voltage at IF = 1 A | VF | 0.45 | 0.55 | 0.6 | V |
| Forward Voltage at IF = 3 A | VF | 0.75 | 0.875 | 0.9 | V |
| Total Capacitance at VR = 4 V, f = 1 MHz | Ctot | - | - | 120 | pF |
| Average Forward Rectified Current | IF(AV) | 1 | A | ||
| Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) | IFSM | 9 | A | ||
| Power Dissipation | Ptot | 450 | mW | ||
| Operating Temperature Range | Tj | -55 to +125 | C | ||
| Storage Temperature Range | Tstg | -55 to +125 | C | ||
2509011105_CBI-1N5818W_C51315007.pdf
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