Fast Recovery Planar Switching Diode CBI 1SS226 with Low Forward Voltage and Small Total Capacitance
Key Attributes
Model Number:
1SS226
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
500nA@80V
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
80V
Diode Configuration:
1 Pair Series Connection
Operating Junction Temperature Range:
-
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
300mA
Mfr. Part #:
1SS226
Package:
SOT-23
Product Description
Product Overview
This is a Silicon Epitaxial Planar Switching Diode designed for ultra-high speed switching applications. It features a small package, low forward voltage, fast reverse recovery time, and small total capacitance, making it ideal for demanding electronic circuits.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23 Plastic Package
- Marking Code: C3
Technical Specifications
| Parameter | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Maximum Peak Reverse Voltage | VRM | 85 | V | |
| Reverse Voltage | VR | 80 | V | |
| Average Rectified Forward Current | IF(AV) | 100 | mA | |
| Maximum Peak Forward Current | IFM | 300 | mA | |
| Non-repetitive Peak Forward Surge Current | IFSM | 2 | A | (10 ms) |
| Power Dissipation | Ptot | 350 | mW | |
| Junction Temperature | Tj | 150 | C | |
| Storage Temperature Range | Tstg | -55 to +150 | C | |
| Forward Voltage | VF | 1.2 | V | at IF = 100 mA |
| Reverse Current | IR | 0.5 | A | at VR = 80 V |
| Total Capacitance | CT | 3 | pF | at VR = 0 , f = 1 MHz |
| Reverse Recovery Time | trr | 4 | ns | at IF = 10 mA |
2410121547_CBI-1SS226_C2919769.pdf
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