Silicon epitaxial planar high voltage switching diode CBI BAS19W for electronic circuit applications
Key Attributes
Model Number:
BAS19W
Product Custom Attributes
Mfr. Part #:
BAS19W
Package:
SOT-323
Product Description
Product Overview
High Voltage Switching Diodes designed for demanding applications. These silicon epitaxial planar diodes offer reliable performance with high voltage ratings and fast switching characteristics. Suitable for various electronic circuits requiring efficient high-voltage switching.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Material: Silicon Epitaxial Planar
- Package: SOT-323 Plastic Package
Technical Specifications
| Parameter | Symbol | BAS19W | BAS20W | BAS21W | BAS21AW | BAS21CW | BAS21SW | Unit | |
|---|---|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25) | |||||||||
| Reverse Voltage | VR | 120 | 200 | 250 | V | ||||
| Continuous Forward Current | IF(AV) | 200 | mA | ||||||
| Repetitive Peak Forward Current | IFRM | 625 | mA | ||||||
| Non-repetitive Peak Forward Surge Current at t = 1 s | IFSM | 0.5 | A | ||||||
| Non-repetitive Peak Forward Surge Current at t = 1 s | IFSM | 2.5 | A | ||||||
| Total Device Dissipation | Ptot | 250 | mW | ||||||
| Thermal Resistance Junction to Ambient | RJA | 357 | /W | ||||||
| Junction and Storage Temperature Range | Tj, Tstg | - 55 to + 150 | |||||||
| Characteristics at Ta = 25 | |||||||||
| Reverse Breakdown Voltage at IR = 100 A | V(BR)R | 120 | 200 | 250 | - | - | - | V | |
| Forward Voltage at IF = 100 mA | VF | - | 1 | V | |||||
| Forward Voltage at IF = 200 mA | VF | - | 1.25 | V | |||||
| Reverse Current at VR = 100 V | IR | - | - | - | 0.1 | 0.1 | 0.1 | A | |
| Reverse Current at VR = 150 V | IR | - | - | - | 100 | 100 | 100 | A | |
| Reverse Current at VR = 200 V | IR | - | - | - | - | - | - | A | |
| Reverse Current at VR = 100 V, Tj = 150 | IR | - | - | - | - | - | - | A | |
| Reverse Current at VR = 150 V, Tj = 150 | IR | - | - | - | - | - | - | A | |
| Reverse Current at VR = 200 V, Tj = 150 | IR | - | - | - | - | - | - | A | |
| Total Capacitance at VR = 0, f = 1 MHz | Ctot | - | 5 | pF | |||||
| Reverse Recovery Time at IF = IR= 30 mA, IR(REC) = 3 mA, RL = 100 | trr | 1 | 3 | 2 | 1 | 3 | 2 | ns | |
| Marking Code | T3 | T3 | T3 | F2 | F3 | F4 | |||
2509181520_CBI-BAS19W_C51814157.pdf
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