Compact SOD123 Package Silicon Planar Zener Diode CBI BZT52C3V9W with 500 Milliwatt Power Dissipation
Key Attributes
Model Number:
BZT52C3V9W
Product Custom Attributes
Impedance(Zzt):
90Ω
Diode Configuration:
Independent
Zener Voltage(Range):
3.7V~4.1V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
3.9V
Impedance(Zzk):
600Ω
Mfr. Part #:
BZT52C3V9W
Package:
SOD-123
Product Description
Product Overview
The BZT52C...W series are silicon planar Zener diodes ideally suited for automated assembly processes. These diodes offer a total power dissipation of up to 500 mW and are designed for applications requiring stable voltage regulation. The compact SOD-123 package makes them suitable for space-constrained designs.
Product Attributes
- Brand: BZT52C...W
- Package Type: SOD-123
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Total Power Dissipation | Ptot | 500 | mW | max. |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature Range | TStg | -65 to +150 | C | |
| Thermal Resistance Junction to Ambient Air | RthA | 340 | C/W | at Ta = 25 C |
| Forward Voltage at IF = 10 mA | VF | 0.9 | V | at Ta = 25 C |
Zener Voltage Range, Dynamic Impedance, and Reverse Leakage Current
| Type | Marking Code | Nominal Zener Voltage (Vznom) | Test Current (IzT) | Zener Voltage Range (VZT) | Dynamic Impedance (ZZT) | Dynamic Impedance (ZZK) | Reverse Leakage Current (IR) | Test Voltage (VR) |
|---|---|---|---|---|---|---|---|---|
| V | mA | V | (Max.) | (Max.) | A (Max.) | V | ||
| BZT52C2V4W | MH | 2.4 | 5 | 2.2...2.6 | 100 | 600 | 1 | 50 |
| BZT52C2V7W | MJ | 2.7 | 5 | 2.5...2.9 | 100 | 600 | 1 | 20 |
| BZT52C3V0W | MK | 3.0 | 5 | 2.8...3.2 | 95 | 600 | 1 | 10 |
| BZT52C3V3W | MM | 3.3 | 5 | 3.1...3.5 | 95 | 600 | 1 | 5 |
| BZT52C3V6W | MN | 3.6 | 5 | 3.4...3.8 | 90 | 600 | 1 | 5 |
| BZT52C3V9W | MP | 3.9 | 5 | 3.7...4.1 | 90 | 600 | 1 | 3 |
| BZT52C4V3W | MR | 4.3 | 5 | 4...4.6 | 90 | 600 | 1 | 3 |
| BZT52C4V7W | MX | 4.7 | 5 | 4.4...5 | 80 | 500 | 1 | 2 |
| BZT52C5V1W | MY | 5.1 | 5 | 4.8...5.4 | 60 | 480 | 1 | 2 |
| BZT52C5V6W | MZ | 5.6 | 5 | 5.2...6 | 40 | 400 | 1 | 1 |
| BZT52C6V2W | NA | 6.2 | 5 | 5.8...6.6 | 10 | 150 | 1 | 3 |
| BZT52C6V8W | NB | 6.8 | 5 | 6.4...7.2 | 15 | 80 | 1 | 2 |
| BZT52C7V5W | NC | 7.5 | 5 | 7...7.9 | 15 | 80 | 1 | 1 |
| BZT52C8V2W | ND | 8.2 | 5 | 7.7...8.7 | 15 | 80 | 1 | 0.7 |
| BZT52C9V1W | NE | 9.1 | 5 | 8.5...9.6 | 15 | 100 | 1 | 0.5 |
| BZT52C10W | NF | 10 | 5 | 9.4...10.6 | 20 | 150 | 1 | 0.2 |
| BZT52C11W | NH | 11 | 5 | 10.4...11.6 | 20 | 150 | 1 | 0.1 |
| BZT52C12W | NJ | 12 | 5 | 11.4...12.7 | 25 | 150 | 1 | 0.1 |
| BZT52C13W | NK | 13 | 5 | 12.4...14.1 | 30 | 170 | 1 | 0.1 |
| BZT52C15W | NM | 15 | 5 | 13.8...15.6 | 30 | 200 | 1 | 0.1 |
| BZT52C16W | NN | 16 | 5 | 15.3...17.1 | 40 | 200 | 1 | 0.1 |
| BZT52C18W | NP | 18 | 5 | 16.8...19.1 | 45 | 225 | 1 | 0.1 |
| BZT52C20W | NR | 20 | 5 | 18.8...21.2 | 55 | 225 | 1 | 0.1 |
| BZT52C22W | NX | 22 | 5 | 20.8...23.3 | 55 | 250 | 1 | 0.1 |
| BZT52C24W | NY | 24 | 5 | 22.8...25.6 | 70 | 250 | 1 | 0.1 |
| BZT52C27W | NZ | 27 | 2 | 25.1...28.9 | 80 | 300 | 0.5 | 0.1 |
| BZT52C30W | PA | 30 | 2 | 28...32 | 80 | 300 | 0.5 | 0.1 |
| BZT52C33W | PB | 33 | 2 | 31...35 | 80 | 325 | 0.5 | 0.1 |
| BZT52C36W | PC | 36 | 2 | 34...38 | 90 | 350 | 0.5 | 0.1 |
| BZT52C39W | PD | 39 | 2 | 37...41 | 130 | 350 | 0.5 | 0.1 |
Note: VZ is tested with pulses (20 ms).
Package Outline
Plastic surface mounted package; 2 leads; SOD-123.
2410121236_CBI-BZT52C3V9W_C2832619.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
