86--136 6733 2386
quality Fast Recovery Schottky Diode CBI BAS70-05 with Low Forward Voltage and Enhanced Transient Protection factory
quality Fast Recovery Schottky Diode CBI BAS70-05 with Low Forward Voltage and Enhanced Transient Protection factory

Fast Recovery Schottky Diode CBI BAS70-05 with Low Forward Voltage and Enhanced Transient Protection

Key Attributes
Model Number: BAS70-05
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100mA
Reverse Leakage Current (Ir):
100nA@50V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
70V
Current - Rectified:
70mA
Mfr. Part #:
BAS70-05
Package:
SOT-23
Product Description

Product Overview

The BAS70 series of Surface Mount Schottky Barrier Diodes are designed for applications requiring low turn-on voltage and fast switching speeds. These diodes feature a PN junction guard ring for enhanced transient and ESD protection, making them suitable for various electronic circuits.

Product Attributes

  • Package Type: SOT-23 Plastic Package
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Model Marking Code Repetitive Peak Reverse Voltage (VRRM) Non-Repetitive Peak Reverse Voltage (VRSM) Maximum DC Blocking Voltage (VR) Average Forward Rectified Current (IF(AV)) Peak Forward Surge Current (IFSM) (t < 10 ms) Power Dissipation (PD) Thermal Resistance Junction to Ambient Air (RJA) Operating Junction Temperature Range (Tj) Storage Temperature Range (Tstg) Forward Voltage (VF) at IF = 1 mA Forward Voltage (VF) at IF = 15 mA Reverse Breakdown Voltage (V(BR)R) at IR = 10 A Reverse Current (IR) at VR = 50 V Total Capacitance (CT) at VR = 0, f = 1 MHz Reverse Recovery Time (trr) at IF = IR = 10 mA to IR = 1 mA, RL = 100
BAS70 73 70 V 70 V 70 V 70 mA 100 mA 200 mW 625 C/W -55 to +125 C -65 to +150 C - 0.41 V 70 V - - -
BAS70-04 74 70 V 70 V 70 V 70 mA 100 mA 200 mW 625 C/W -55 to +125 C -65 to +150 C - 1 V 70 V 100 nA 2 pF 5 ns
BAS70-05 75 70 V 70 V 70 V 70 mA 100 mA 200 mW 625 C/W -55 to +125 C -65 to +150 C - 1 V 70 V 100 nA 2 pF 5 ns
BAS70-06 76 70 V 70 V 70 V 70 mA 100 mA 200 mW 625 C/W -55 to +125 C -65 to +150 C - 1 V 70 V 100 nA 2 pF 5 ns

Package Outline (SOT-23)

Symbol Dimension in Millimeters (Min) Dimension in Millimeters (Max)
A 0.90 1.10
A1 0.013 0.100
B 1.80 2.00
bp 0.35 0.50
C 0.09 0.150
D 2.80 3.00
E 1.20 1.40
HE 2.20 2.80
Lp 0.20 0.50
0 5

2509011105_CBI-BAS70-05_C51315107.pdf

Related Products
quality Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications factory
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications factory
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
quality Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design factory
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.