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quality Schottky Diode Array CBI BAS70DW-06 Fast Switching Speeds Low Forward Voltage Drop Diode Protection factory
quality Schottky Diode Array CBI BAS70DW-06 Fast Switching Speeds Low Forward Voltage Drop Diode Protection factory

Schottky Diode Array CBI BAS70DW-06 Fast Switching Speeds Low Forward Voltage Drop Diode Protection

Key Attributes
Model Number: BAS70DW-06
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA@50V
Non-Repetitive Peak Forward Surge Current:
100mA
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
70mA
Mfr. Part #:
BAS70DW-06
Package:
SOT-363
Product Description

Product Overview

This Schottky Barrier Diode Array offers a low forward voltage drop and fast switching speeds, making it suitable for various electronic applications. Designed with a PN junction guard ring for transient and ESD protection, these diodes are available in a small surface mount package and lead-free versions. They are ideal for applications requiring efficient and protected diode functionality.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-363 Plastic-Encapsulate Diodes
  • Marking: BAS70BRW, BAS70DW-04, BAS70DW-05, BAS70DW-06, BAS70TW
  • Molding Compound: Green (indicated by solid dot) or normal device (no solid dot)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Repetitive Peak Reverse Voltage VRRM 70 V
Peak Working Reverse Voltage VRWM V
DC Blocking Voltage VR V
RMS Reverse Voltage VR(RMS) 49 V
Forward Continuous Current IO 70 mA
Non-repetitive Peak Forward Surge Current @t=8.3ms IFSM 100 mA
Power Dissipation PD 200 mW
Thermal Resistance From Junction To Ambient RJA 500 /W
Operating Junction Temperature Range Tj -40 +125
Storage Temperature Range Tstg -55 +150
Electrical Characteristics (Ta=25 unless otherwise specified)
Reverse voltage V(BR) IR=10A 70 V
Reverse current IR VR=50V 0.1 A
Forward voltage VF IF=1mA 0.41 V
IF=15mA 1 V
Total capacitance Ctot VR=0V,f=1MHz 2 pF
Reverse recovery time trr IF=IR=10mA to IR=1mA,Irr=0.1IR, RL=100 5 ns
Symbol Dimension in Millimeters Min Max
A 0.90 1.00
A1 0.010 0.100
B 1.20 1.40
bp 0.25 0.45
C 0.09 0.15
D 2.00 2.20
E 1.15 1.35
HE 2.15 2.55
Lp 0.25 0.46
0 6

2410122026_CBI-BAS70DW-06_C21714100.pdf

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