Plastic Encapsulated Zener Diode CBI BZT52B7V5 with Planar Die and 350mW Power Dissipation SOD123 Package

Key Attributes
Model Number: BZT52B7V5
Product Custom Attributes
Impedance(Zzt):
15Ω
Zener Voltage(Range):
7.35V~7.65V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
7.5V
Impedance(Zzk):
80Ω
Mfr. Part #:
BZT52B7V5
Package:
SOD-123
Product Description

Product Overview

This Zener Diode features a planar die construction and a power dissipation of 350mW on a ceramic PCB. It is designed for general purpose, medium current applications and is ideally suited for automated assembly processes. Lead-free versions are available.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Construction: Planar Die
  • Package Type: SOD-123
  • Material: Plastic-Encapsulated
  • Availability: Lead Free Version

Technical Specifications

Type Number Type Code Nominal Zener Voltage (Vz@IzT) (V) Minimum Zener Voltage (V) Maximum Zener Voltage (V) Test Current (IzT) (mA) Maximum Zener Impedance (ZzT@IzT) () Reverse Current (IzK) (A) Test Current for ZzK (IzK) (mA) Maximum Zener Impedance (ZzK@IzK) () Typical Temperature Coefficient (mV/C) Forward Voltage (VF @ IF = 10mA) (V) Power Dissipation (Pd) (mW) Junction Temperature (Tj) (C) Storage Temperature Range (C)
BZT52B2V4 2WX 2.4 2.35 2.45 5 100 50 1.0 600 -3.5 0.9 350 150 -55 ~ +150
BZT52B2V7 2W1 2.7 2.65 2.75 5 100 20 1.0 600 -3.5 0.9 350 150 -55 ~ +150
BZT52B3V0 2W2 3.0 2.94 3.06 5 95 10 1.0 600 -3.5 0.9 350 150 -55 ~ +150
BZT52B3V3 2W3 3.3 3.23 3.37 5 95 5 1.0 600 -3.5 0.9 350 150 -55 ~ +150
BZT52B3V6 2W4 3.6 3.53 3.67 5 90 5 1.0 600 -3.5 0.9 350 150 -55 ~ +150
BZT52B3V9 2W5 3.9 3.82 3.98 5 90 3 1.0 600 -3.5 0.9 350 150 -55 ~ +150
BZT52B4V3 2W6 4.3 4.21 4.39 5 90 3 1.0 600 -3.5 0.9 350 150 -55 ~ +150
BZT52B4V7 2W7 4.7 4.61 4.79 5 80 3 2.0 500 -3.5 0.9 350 150 -55 ~ +150
BZT52B5V1 2W8 5.1 5.00 5.20 5 60 2 2.0 480 -2.7 0.9 350 150 -55 ~ +150
BZT52B5V6 2W9 5.6 5.49 5.71 5 40 1 2.0 400 -2.0 0.9 350 150 -55 ~ +150
BZT52B6V2 2WA 6.2 6.08 6.32 5 10 3 4.0 150 0.4 0.9 350 150 -55 ~ +150
BZT52B6V8 2WB 6.8 6.66 6.94 5 15 2 4.0 80 1.2 0.9 350 150 -55 ~ +150
BZT52B7V5 2WC 7.5 7.35 7.65 5 15 1 5.0 80 2.5 0.9 350 150 -55 ~ +150
BZT52B8V2 2WD 8.2 8.04 8.36 5 15 0.7 5.0 80 3.2 0.9 350 150 -55 ~ +150
BZT52B9V1 2WE 9.1 8.92 9.28 5 15 0.5 6.0 100 3.8 0.9 350 150 -55 ~ +150
BZT52B10 2WF 10 9.80 10.20 5 20 0.2 7.0 150 4.5 0.9 350 150 -55 ~ +150
BZT52B11 2WG 11 10.78 11.22 5 20 0.1 8.0 150 5.4 0.9 350 150 -55 ~ +150
BZT52B12 2WH 12 11.76 12.24 5 25 0.1 8.0 150 6.0 0.9 350 150 -55 ~ +150
BZT52B13 2WI 13 12.74 13.26 5 30 0.1 8.0 170 7.0 0.9 350 150 -55 ~ +150
BZT52B15 2WJ 15 14.70 15.30 5 30 0.1 10.5 200 9.2 0.9 350 150 -55 ~ +150
BZT52B16 2WK 16 15.68 16.32 5 40 0.1 11.2 200 10.4 0.9 350 150 -55 ~ +150
BZT52B18 2WL 18 17.64 18.36 5 45 0.1 12.6 225 12.4 0.9 350 150 -55 ~ +150
BZT52B20 2WM 20 19.60 20.40 5 55 0.1 14.0 225 14.4 0.9 350 150 -55 ~ +150
BZT52B22 2WN 22 21.56 22.44 5 55 0.1 15.4 250 16.4 0.9 350 150 -55 ~ +150
BZT52B24 2WO 24 23.52 24.48 5 70 0.1 16.8 250 18.4 0.9 350 150 -55 ~ +150
BZT52B27 2WP 27 26.46 27.54 2 80 0.1 18.9 300 21.4 0.9 350 150 -55 ~ +150
BZT52B30 2WQ 30 29.40 30.60 2 80 0.1 21.0 300 24.4 0.9 350 150 -55 ~ +150
BZT52B33 2WR 33 32.34 33.66 2 80 0.1 23.1 325 27.4 0.9 350 150 -55 ~ +150
BZT52B36 2WS 36 35.28 36.72 2 90 0.1 25.2 350 30.4 0.9 350 150 -55 ~ +150
BZT52B39 2WT 39 38.22 39.78 2 130 0.1 27.3 350 33.4 0.9 350 150 -55 ~ +150
BZT52B43 2WU 43 41.16 42.84 2 130 0.1 29.4 350 36.4 0.9 350 150 -55 ~ +150

Package Outline (SOD-123)

Symbol Dimension (mm) Min Dimension (mm) Max
A 0.95 1.15
A1 0.01 0.100
B 1.55 1.65
bp 0.50 0.70
C 0.09 0.150
E 2.60 2.70
HE 3.45 3.85
Lp 0.20 0.45
0 5

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. f = 1kHz.

2410121340_CBI-BZT52B7V5_C21714220.pdf

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