Band Switching Diode CBI BA591WS with Small Inductance and Low Forward Resistance in SOD 323 Package

Key Attributes
Model Number: BA591WS
Product Custom Attributes
Reverse Leakage Current (Ir):
20nA
Operating Junction Temperature Range:
-65℃~+150℃
Voltage - DC Reverse (Vr) (Max):
35V
Pd - Power Dissipation:
500mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
100mA
Mfr. Part #:
BA591WS
Package:
SOD-323
Product Description

Product Overview

This BAND SWITCHING DIODE is designed for applications requiring a very small plastic SMD package. It features low diode capacitance, low diode forward resistance, and small inductance, making it suitable for various electronic circuits where efficient switching and minimal signal interference are critical. The diode is housed in a compact SOD-323 package.

Product Attributes

  • Marking Code: WL
  • Package Type: SOD-323
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Value Unit Typ. Max.
Absolute Maximum Ratings (Ta = 25 C)
Continuous Reverse Voltage VR 35 V
Continuous Forward Current IF 100 mA
Power Dissipation Ptot 500 mW
Operating Junction Temperature Range TJ -65 to +150 C
Storage Temperature Range Tstg -65 to +150 C
Electrical Characteristics (at Ta = 25 C)
Forward Voltage at IF = 10 mA VF V - 1
Reverse Current at VR = 20 V IR nA - 20
Diode Capacitance CD pF - 1.05 (at VR = 1 V, f = 1 MHz)
0.9 (at VR = 3 V, f = 1 MHz)
Diode Forward Resistance rD - 0.7 (at IF = 3 mA, f = 100 MHz)
0.5 (at IF = 10 mA, f = 100 MHz)
Reverse Resistance at VR = 1 V, f = 100 MHz 1/gp K 100 -
Series Inductance Ls nH 2 -

2508261745_CBI-BA591WS_C5362079.pdf

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