Silicon Epitaxial Planar Diode CBI BAV21WS High Voltage Switching Diode Surface Mount SOD323 Package
Key Attributes
Model Number:
BAV21WS
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA@200V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAV21WS
Package:
SOD-323
Product Description
Product Overview
The Silicon Epitaxial Planar Diodes High Voltage Switching Diode series offers fast switching speeds and is designed for surface mount applications, making it ideal for automatic insertion. These diodes are suitable for high-voltage switching applications.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: Plastic surface mounted package; 2 leads SOD-323
Technical Specifications
| Parameter | Symbol | BAV19WS | BAV20WS | BAV21WS | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 OC) | |||||
| Repetitive Peak Reverse Voltage | VRRM | 120 | 200 | 250 | V |
| Reverse Voltage | VR | 100 | 150 | 200 | V |
| Average Rectified Forward Current | IF(AV) | 200 | mA | ||
| Forward Continuous Current | IFM | 400 | mA | ||
| Repetitive Peak Forward Current | IFRM | 625 | mA | ||
| Non-Repetitive Peak Forward Surge Current at t = 1 s | IFSM | 2.5 | A | ||
| Non-Repetitive Peak Forward Surge Current at t = 1 s | IFSM | 0.5 | A | ||
| Power Dissipation | Ptot | 200 | mW | ||
| Operating and Storage Temperature Range | Tj, Tstg | - 65 to + 150 | OC | ||
| Characteristics (at Ta = 25 OC) | |||||
| Reverse Breakdown Voltage at IR = 100 A | V(BR)R | 120 | 200 | 250 | V |
| Reverse Current at VR = 100 V | IR | 100 | - | - | nA |
| Reverse Current at VR = 150 V | IR | - | 100 | - | nA |
| Reverse Current at VR = 200 V | IR | - | - | 100 | nA |
| Forward Voltage at IF = 100 mA | VF | 1 | V | ||
| Forward Voltage at IF = 200 mA | VF | 1.25 | V | ||
| Total Capacitance at VR = 0, f = 1 MHz | CT | 5 | pF | ||
| Reverse Recovery Time at IF = IR = 30 mA, IRR = 0.1 X IR, RL = 100 | trr | 50 | ns | ||
| PIN | DESCRIPTION | MARKING |
|---|---|---|
| 1 | Cathode | JX |
| 2 | Anode | T2, T3 |
Marking Codes: BAV19WS, BAV20WS, BAV21WS
Simplified outline: SOD-323
2410121536_CBI-BAV21WS_C2919739.pdf
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