Silicon Epitaxial Planar Switching Diode CBI BAS16 with Low Forward Voltage Fast Reverse Recovery

Key Attributes
Model Number: BAS16
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
350mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
215mA
Mfr. Part #:
BAS16
Package:
SOT-23
Product Description

Product Overview

This is a Silicon Epitaxial Planar Switching Diode designed for ultra-high-speed switching applications. It features a small package, low forward voltage, fast reverse recovery time, and small total capacitance, making it ideal for demanding switching scenarios.

Product Attributes

  • Marking Code: 5D
  • Package Type: SOT-23 Plastic Package
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Value Unit
Absolute Maximum Ratings (Ta = 25 OC)
Repetitive Peak Reverse Voltage VRRM 85 V
Continuous Reverse Voltage VR 75 V
Continuous Forward Current IF 215 mA
Repetitive Peak Forward Current IFRM 500 mA
Non-Repetitive Peak Forward Surge Current (t = 1 s, t = 1 ms, t = 1 s) IFSM 4 A
1 A
0.5 A
Power Dissipation Ptot 350 mW
Junction Temperature Tj 150 OC
Storage Temperature Range Tstg -65 to +150 OC
Characteristics (at Ta = 25 OC)
Forward Voltage VF (at IF = 1 mA) - 715 mV
VF (at IF = 10 mA) - 855 mV
VF (at IF = 50 mA) - 1 V
VF (at IF = 150 mA) - 1.25 V
Reverse Current IR (at VR = 25 V) - 30 nA
IR (at VR = 75 V) - 1 A
IR (at VR = 25 V, TJ = 150 OC) - 30 A
IR (at VR = 75 V, TJ = 150 OC) - 50 A
Reverse Breakdown Voltage (at IR = 100 A) V(BR)R 75 V
Diode Capacitance (at VR = 0 , f = 1 MHz) Cd - 2 pF
Reverse Recovery Time (at IF = IR = 10 mA, RL = 50 ) trr - 4 ns

2410121628_CBI-BAS16_C2919770.pdf

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