Planar epitaxial silicon diode CBI 1SS355WT surface mount package SOD523 designed for switching performance

Key Attributes
Model Number: 1SS355WT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500mA
Reverse Leakage Current (Ir):
100nA@80V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
80V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
1SS355WT
Package:
SOD-523
Product Description

Product Overview

This is a silicon epitaxial planar switching diode designed for surface-mounted applications. It offers high reliability and excellent surge current handling capability, making it suitable for high-speed switching applications.

Product Attributes

  • Package Type: Plastic surface mounted package
  • Package Outline: SOD-523

Technical Specifications

Parameter Symbol Value Unit Description
Peak Reverse Voltage VRM 90 V
Reverse Voltage VR 80 V
Average Rectified Forward Current IF(AV) 100 mA
Peak Forward Current IFM 225 mA
Surge Forward Current (1 s) IFSM 500 mA
Junction Temperature Tj 150 OC
Storage Temperature Range Tstg -55 to +150 OC
Forward Voltage at IF = 100 mA VF 1.2 V Max.
Reverse Current at VR = 80 V IR 0.1 A Max.
Capacitance between Terminals at VR = 0.5 V, f = 1 MHz CT 3 pF Max.
Reverse Recovery Time at VR = 6 V, IF = 10 mA, RL = 100 trr 4 ns Max.

Package Dimensions (SOD-523)

Dimension Unit Min. Max.
A mm 1.15 1.25
b mm 0.100 0.135
p mm 0.3 0.4
C mm 0.60 0.70
D mm 0.75 0.85
E mm 1.5 1.7
H mm 0.1

Pin Description

PIN DESCRIPTION
1 Cathode
2 Anode

Marking Code

" " (Specific marking code not provided in detail)

Model Number

1SS355WT


2410121246_CBI-1SS355WT_C2836063.pdf

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