Plastic Encapsulated Schottky Barrier Diode Array CBI BAT54CDW with Fast Switching in SOT363 Package
Key Attributes
Model Number:
BAT54CDW
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
2uA@25V
Voltage - DC Reverse (Vr) (Max):
30V
Diode Configuration:
2 Pair Common Cathode
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
200mA
Mfr. Part #:
BAT54CDW
Package:
SOT-363
Product Description
Product Overview
The BAT54ADW/BAT54BRW/BAT54CDW/BAT54SDW/BAT54TW/BAT54DW/BAT54JW series are Schottky barrier diode arrays housed in a SOT-363 plastic-encapsulated package. These diodes are designed for surface mount applications and feature a low forward voltage drop and fast switching speeds. They incorporate a PN junction guard ring for enhanced transient and ESD protection. Lead-free versions are available.
Product Attributes
- Package Type: SOT-363
- Diode Type: Schottky Barrier Diode Array
- Encapsulation: Plastic
- Protection: PN Junction Guard Ring for Transient and ESD Protection
- Availability: Lead Free Version Available
Technical Specifications
| Model | VRRM (V) | VRWM (V) | VR (V) | IO (mA) | IFRM (mA) | IFSM (mA) | PD (mW) | RJA (/W) | Tj () | Tstg () | V(BR) @ IR=100A (V) | IR @ VR=25V (A) | VF @ IF=1mA (V) | VF @ IF=10mA (V) | VF @ IF=30mA (V) | VF @ IF=100mA (mV) | Ctot @ VR=1V, f=1MHz (pF) | trr @ IF=10mA, IR=10mA, Irr=0.1IR, RL=100 (ns) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BAT54ADW | 30 | 30 | 30 | 200 | 300 | 600 | 200 | 500 | 125 | -55~+150 | 30 | 2 | 0.32 | 0.40 | 0.50 | 1000 | 10 | 5 |
| BAT54BRW | ||||||||||||||||||
| BAT54CDW | ||||||||||||||||||
| BAT54SDW | ||||||||||||||||||
| BAT54TW | ||||||||||||||||||
| BAT54DW | ||||||||||||||||||
| BAT54JW |
2410121231_CBI-BAT54CDW_C2919792.pdf
Related Products
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
