low current rectification silicon epitaxial planar schottky barrier diode CBI RB501V-40 with SOD-323 package
Key Attributes
Model Number:
RB501V-40
Product Custom Attributes
Reverse Leakage Current (Ir):
30uA@10V
Non-Repetitive Peak Forward Surge Current:
1A
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
550mV@100mA
Current - Rectified:
100mA
Mfr. Part #:
RB501V-40
Package:
SOD-323
Product Description
Product Overview
This SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE is a small surface mounting type (S7) designed for low current rectification, offering high reliability. It is suitable for various low current rectification applications.
Product Attributes
- Type: Silicon Epitaxial Planar Schottky Barrier Diode
- Package Type: SOD-323
- Marking Code: S7
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Handling Note: ESD sensitive product handling required.
Technical Specifications
| Parameter | Symbol | Value | Unit | Typ. | Max. |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||
| Peak Reverse Voltage | VRM | 45 | V | - | - |
| Reverse Voltage | VR | 40 | V | - | - |
| Mean Rectifying Current | IO | 0.1 | A | - | - |
| Peak Forward Surge Current (60 Hz for 1 Cyc.) | IFSM | 1 | A | - | - |
| Junction Temperature | Tj | 125 | C | - | - |
| Storage Temperature Range | Tstg | - 40 to + 125 | C | - | - |
| Characteristics at Ta = 25 C | |||||
| Forward Voltage at IF = 100 mA | VF | - | V | - | 0.55 |
| Forward Voltage at IF = 10 mA | VF | - | V | - | 0.34 |
| Reverse Current at VR = 10 V | IR | - | A | - | 30 |
| Capacitance Between Terminals at VR = 10 V, f = 1 MHz | CT | 6 | pF | - | - |
Package Outline
Plastic surface mounted package; 2 leads
| Symbol | Dimension in Millimeters | Min | Max |
|---|---|---|---|
| A | 0.95 | 1.15 | |
| A1 | 0.010 | 0.100 | |
| B | 1.20 | 1.40 | |
| bp | 0.25 | 0.40 | |
| C | 0.09 | 0.150 | |
| E | 1.60 | 1.80 | |
| HE | 2.30 | 2.70 | |
| Lp | 0.20 | 0.40 | |
| 0 | 5 |
2410121642_CBI-RB501V-40_C5362073.pdf
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