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quality High speed switching diode CBI BAS21C in SOT23 surface mount package for general purpose electronics factory
quality High speed switching diode CBI BAS21C in SOT23 surface mount package for general purpose electronics factory

High speed switching diode CBI BAS21C in SOT23 surface mount package for general purpose electronics

Key Attributes
Model Number: BAS21C
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@200V
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Recovery Time (trr):
50ns
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21C
Package:
SOT-23
Product Description

Product Overview

The BAS21 series are high-performance switching diodes designed for general-purpose switching applications. Featuring fast switching speeds and a surface mount package ideally suited for automatic insertion, these diodes offer high conductance and are available in various models (BAS21, BAS21A, BAS21C, BAS21S) with distinct markings (JS, JS2, JS3, JS4). Their robust design makes them suitable for a wide range of electronic circuits requiring reliable switching.

Product Attributes

  • Package Type: SOT-23
  • Mounting Type: Surface Mount
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Test Conditions Limits Unit
Maximum Ratings @ TA=25
Repetitive peak reverse voltage VRRM 250 V
Working Peak reverse voltage VRWM 250 V
DC Blocking Voltage VR 250 V
Forward Continuous Current IFM 400 mA
Average Rectified Output Current IO 200 mA
Non-Repetitive Peak Forward Surge Current IFSM @ t = 1.0s 2.5 A
@ t = 1.0s 0.5 A
Repetitive Peak Forward Surge Current IFRM 625 mA
Power Dissipation PD 225 mW
Thermal Resistance. Junction to Ambient Air RJA 556 /W
Junction temperature TJ 150
Storage temperature range TSTG -65-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Reverse breakdown voltage V(BR) IR= 100A 250 V
Reverse voltage leakage current IR VR=200V 1 A
Forward voltage VF IF=100mA 1000 mV
IF=200mA 1250 mV
Diode capacitance CD VR=0V, f=1MHz 5 pF
Reveres recovery time trr IF=IR=30mA, Irr=0.1IR,RL=100 50 nS
PACKAGE OUTLINE SOT-23
Symbol Dimension in Millimeters Min Max
A 0.90 1.10
A1 0.013 0.100
B 1.80 2.00
bp 0.35 0.50
C 0.09 0.150
D 2.80 3.00
E 1.20 1.40
HE 2.20 2.80
Lp 0.20 0.50
0 5

2409272232_CBI-BAS21C_C21714259.pdf

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