Small Signal Switching N Channel Transistor CBI MMBT7002 with Low RDS ON and High Saturation Current
Key Attributes
Model Number:
MMBT7002
Product Custom Attributes
Mfr. Part #:
MMBT7002
Package:
SOT-23
Product Description
Product Overview
This N-Channel Enhancement Mode Field Effect Transistor is designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), high saturation current capability, and high-speed switching performance. Suitable for various electronic circuits requiring efficient switching.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package: SOT-23 Plastic Package
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | |
| Drain-Gate Voltage | VDGR | 60 | V | RGS 1M |
| Gate-Source Voltage - Continuous | VGSS | 20 | V | |
| Gate-Source Voltage - Non Repetitive (tp < 50 s) | VGSS | 40 | V | |
| Maximum Drain Current - Continuous | ID | 115 | mA | |
| Maximum Drain Current - Pulsed | ID | 800 | mA | |
| Total Power Dissipation | Ptot | 200 | mW | Ta = 25 OC |
| Operating and Storage Temperature Range | TJ, Ts | - 55 to + 150 | OC | |
| Drain Source Breakdown Voltage | BVDSS | 60 | V | ID = 10 A |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = 60 V |
| Gate-Body Leakage Current | IGSS | - 100 | nA | VGS = 20 V |
| Gate Threshold Voltage | VGS(th) | 1 - 2.5 | V | VDS = VGS, ID = 250 A |
| On-State Drain Current | ID(ON) | 500 | mA | VGS = 10 V, VDS = 7.5 V |
| Drain-Source On-Voltage | VDS(ON) | - 3.75 | V | VGS = 10 V, ID = 500 mA |
| Drain-Source On-Voltage | VDS(ON) | - 1.5 | V | VGS = 5 V, ID = 50 mA |
| Static Drain-Source On-Resistance | RDS(ON) | 7.5 | VGS = 10 V, ID = 500 mA | |
| Forward Transconductance | gFS | 80 | mS | VDS = 10 V, ID = 200 mA |
| Input Capacitance | Ciss | 50 | pF | VDS = 25 V, f = 1 MHz |
| Output Capacitance | Coss | 25 | pF | VDS = 25 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | 5 | pF | VDS = 25 V, f = 1 MHz |
| Turn-On Time | ton | 20 | ns | VDD = 30 V, RL= 150 , ID = 0.2 A, VGS = 10V, RGEN = 25 |
| Turn-Off Time | toff | 20 | ns | VDD = 30 V, RL= 150 , ID = 0.2 A, VGS = 10V, RGEN = 25 |
2510101615_CBI-MMBT7002_C51315426.pdf
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