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quality Low RDS ON and High Current Capability N Channel MOSFET CBI 2N7002 for Voltage Controlled Switching factory
quality Low RDS ON and High Current Capability N Channel MOSFET CBI 2N7002 for Voltage Controlled Switching factory

Low RDS ON and High Current Capability N Channel MOSFET CBI 2N7002 for Voltage Controlled Switching

Key Attributes
Model Number: 2N7002
Product Custom Attributes
Mfr. Part #:
2N7002
Package:
SOT-23
Product Description

Product Overview

This N-Channel Enhancement Mode Field Effect Transistor is designed with a high-density cell structure for low RDS(ON), enabling voltage-controlled small signal switching. It offers high saturation current capability and high-speed switching, making it suitable for various electronic applications requiring efficient and fast transistor performance.

Product Attributes

  • Package: SOT-23 Plastic Package
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Value Unit Conditions
Absolute Maximum Ratings
Drain-Source Voltage VDSS 60 V (Ta = 25 C)
Drain-Gate Voltage VDGR 60 V (RGS 1M, Ta = 25 C)
Gate-Source Voltage - Continuous VGSS 20 V (Ta = 25 C)
Gate-Source Voltage - Non Repetitive (tp < 50 s) VGSS 40 V (Ta = 25 C)
Maximum Drain Current - Continuous ID 115 mA (Ta = 25 C)
Maximum Drain Current - Pulsed ID 800 mA (Ta = 25 C)
Total Power Dissipation Ptot 200 mW (Ta = 25 C)
Operating and Storage Temperature Range TJ, Ts -55 to +150 C
Characteristics
Drain Source Breakdown Voltage BVDSS 60 V (ID = 10 A, Ta = 25 C)
Zero Gate Voltage Drain Current IDSS 1 A (VDS = 60 V, Ta = 25 C)
Gate-Body Leakage Current IGSS -100 nA (VGS = 20 V, Ta = 25 C)
Gate Threshold Voltage VGS(th) 1 to 2.5 V (VDS = VGS, ID = 250 A, Ta = 25 C)
On-State Drain Current ID(ON) 500 mA (VGS = 10 V, VDS = 7.5 V, Ta = 25 C)
Drain-Source On-Voltage VDS(ON) 3.75 V (VGS = 10 V, ID = 500 mA, Ta = 25 C)
1.5 V (VGS = 5 V, ID = 50 mA, Ta = 25 C)
Static Drain-Source On-Resistance RDS(ON) 7.5 (VGS = 10 V, ID = 500 mA, Ta = 25 C)
Forward Transconductance gFS 80 mS (VDS = 10 V, ID = 200 mA, Ta = 25 C)
Input Capacitance Ciss 50 pF (VDS = 25 V, f = 1 MHz, Ta = 25 C)
Output Capacitance Coss 25 pF (VDS = 25 V, f = 1 MHz, Ta = 25 C)
Reverse Transfer Capacitance Crss 5 pF (VDS = 25 V, f = 1 MHz, Ta = 25 C)
Turn-On Time ton 20 ns (VDD = 30 V, RL= 150 , ID = 0.2 A, VGS = 10V, RGEN = 25, Ta = 25 C)
Turn-Off Time toff 20 ns (VDD = 30 V, RL= 150 , ID = 0.2 A, VGS = 10V, RGEN = 25, Ta = 25 C)

2510131755_CBI-2N7002_C51315010.pdf

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