General Purpose Zener Diode Featuring CBI BZT52B5V6 with Planar Die and Plastic Encapsulation
Key Attributes
Model Number:
BZT52B5V6
Product Custom Attributes
Impedance(Zzt):
40Ω
Pd - Power Dissipation:
350mW
Zener Voltage(Range):
5.49V~5.71V
Zener Voltage(Nom):
5.6V
Impedance(Zzk):
400Ω
Mfr. Part #:
BZT52B5V6
Package:
SOD-123
Product Description
Product Overview
This Zener Diode features a planar die construction and a power dissipation of 350mW on a ceramic PCB. It is designed for general purpose, medium current applications and is ideally suited for automated assembly processes. Lead-free versions are available.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Construction: Planar Die
- Material: Plastic-Encapsulate Diodes
- Availability: Lead Free Version
Technical Specifications
| Characteristic | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Forward Voltage | VF | 0.9 | V | @ IF = 10mA (Note 2) |
| Power Dissipation | Pd | 350 | mW | (Note 1) |
| Thermal Resistance Junction to Ambient | RJA | 357 | Ω/W | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55 ~ +150 |
Electrical Characteristics (Ta = 25C unless otherwise specified)
| Type Number | Type Code | Nominal Zener Voltage (V) | Minimum Zener Voltage (V) | Maximum Zener Voltage (V) | Test Current (mA) | Maximum Zener Impedance () | Maximum Reverse Current (A) | Typical Temperature Coefficient (mV/C) |
|---|---|---|---|---|---|---|---|---|
| BZT52B2V4 | 2WX | 2.4 | 2.35 | 2.45 | 5 | 100 | 50 | -3.5 |
| BZT52B2V7 | 2W1 | 2.7 | 2.65 | 2.75 | 5 | 100 | 20 | -3.5 |
| BZT52B3V0 | 2W2 | 3.0 | 2.94 | 3.06 | 5 | 95 | 10 | -3.5 |
| BZT52B3V3 | 2W3 | 3.3 | 3.23 | 3.37 | 5 | 95 | 5 | -3.5 |
| BZT52B3V6 | 2W4 | 3.6 | 3.53 | 3.67 | 5 | 90 | 5 | -3.5 |
| BZT52B3V9 | 2W5 | 3.9 | 3.82 | 3.98 | 5 | 90 | 3 | -3.5 |
| BZT52B4V3 | 2W6 | 4.3 | 4.21 | 4.39 | 5 | 90 | 3 | -3.5 |
| BZT52B4V7 | 2W7 | 4.7 | 4.61 | 4.79 | 5 | 80 | 3 | -3.5 |
| BZT52B5V1 | 2W8 | 5.1 | 5.00 | 5.20 | 5 | 60 | 2 | -2.7 |
| BZT52B5V6 | 2W9 | 5.6 | 5.49 | 5.71 | 5 | 40 | 1 | -2.0 |
| BZT52B6V2 | 2WA | 6.2 | 6.08 | 6.32 | 5 | 10 | 3 | 0.4 |
| BZT52B6V8 | 2WB | 6.8 | 6.66 | 6.94 | 5 | 15 | 2 | 1.2 |
| BZT52B7V5 | 2WC | 7.5 | 7.35 | 7.65 | 5 | 15 | 1 | 2.5 |
| BZT52B8V2 | 2WD | 8.2 | 8.04 | 8.36 | 5 | 15 | 0.7 | 3.2 |
| BZT52B9V1 | 2WE | 9.1 | 8.92 | 9.28 | 5 | 15 | 0.5 | 3.8 |
| BZT52B10 | 2WF | 10 | 9.80 | 10.20 | 5 | 20 | 0.2 | 4.5 |
| BZT52B11 | 2WG | 11 | 10.78 | 11.22 | 5 | 20 | 0.1 | 5.4 |
| BZT52B12 | 2WH | 12 | 11.76 | 12.24 | 5 | 25 | 0.1 | 6.0 |
| BZT52B13 | 2WI | 13 | 12.74 | 13.26 | 5 | 30 | 0.1 | 7.0 |
| BZT52B15 | 2WJ | 15 | 14.70 | 15.30 | 5 | 30 | 0.1 | 9.2 |
| BZT52B16 | 2WK | 16 | 15.68 | 16.32 | 5 | 40 | 0.1 | 10.4 |
| BZT52B18 | 2WL | 18 | 17.64 | 18.36 | 5 | 45 | 0.1 | 12.4 |
| BZT52B20 | 2WM | 20 | 19.60 | 20.40 | 5 | 55 | 0.1 | 14.4 |
| BZT52B22 | 2WN | 22 | 21.56 | 22.44 | 5 | 55 | 0.1 | 16.4 |
| BZT52B24 | 2WO | 24 | 23.52 | 24.48 | 5 | 70 | 0.1 | 18.4 |
| BZT52B27 | 2WP | 27 | 26.46 | 27.54 | 2 | 80 | 0.1 | 21.4 |
| BZT52B30 | 2WQ | 30 | 29.40 | 30.60 | 2 | 80 | 0.1 | 24.4 |
| BZT52B33 | 2WR | 33 | 32.34 | 33.66 | 2 | 80 | 0.1 | 27.4 |
| BZT52B36 | 2WS | 36 | 35.28 | 36.72 | 2 | 90 | 0.1 | 30.4 |
| BZT52B39 | 2WT | 39 | 38.22 | 39.78 | 2 | 130 | 0.1 | 33.4 |
| BZT52B43 | 2WU | 43 | 41.16 | 42.84 | 2 | 130 | 0.1 | 36.4 |
Notes:
- 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
- 2. Short duration test pulse used to minimize self-heating effect.
- 3. f = 1kHz.
Package Outline
Plastic surface mounted package; 2 leads SOD-123
| Symbol | Dimension in Millimeters (Min) | Dimension in Millimeters (Max) |
|---|---|---|
| A | 0.95 | 1.15 |
| A1 | 0.01 | 0.100 |
| B | 1.55 | 1.65 |
| bp | 0.50 | 0.70 |
| C | 0.09 | 0.150 |
| E | 2.60 | 2.70 |
| HE | 3.45 | 3.85 |
| Lp | 0.20 | 0.45 |
| 0 | 5 |
2410121340_CBI-BZT52B5V6_C21714217.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
