CBI CB2301T 2.8A P Channel TrenchFET MOSFET Featuring 20V Drain Source Voltage and Low On Resistance
Key Attributes
Model Number:
CB2301T-2.8A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
RDS(on):
170mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
405pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
CB2301T-2.8A
Package:
SOT-523
Product Description
Product Overview
This P-Channel TrenchFET Power MOSFET is designed for load switching in portable devices and DC/DC converters. It offers a -20V Drain-Source Voltage and a continuous drain current of -2.8A, with excellent on-resistance characteristics.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Type: P-Channel TrenchFET Power MOSFET
- Package: SOT523
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | -2.8 | A | |||
| Pulsed Drain Current | IDM | -4.8 | A | |||
| Continuous Source-Drain Diode Current | IS | -0.72 | A | |||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance from Junction to Ambient (t 5s) | RJA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | ~ | +150 | ||
| Electrical Characteristics (Ta=25 unless otherwise noted) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -1 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS =8V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-20V, VGS =0V | -1 | A | ||
| Drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-2.8A | 0.090 | 0.120 | ||
| VGS =-2.5V, ID =-2.0A | 0.110 | 0.170 | ||||
| Forward transconductance | gfs | VDS =-5V, ID =-1.8A | 6.5 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 405 | pF | ||
| Output capacitance | Coss | 75 | pF | |||
| Reverse transfer capacitance | Crss | 55 | pF | |||
| Total gate charge | Qg | VDS =-10V,VGS =-4.5V,ID =-3A | 5.5 | 10 | nC | |
| VDS =-10V,VGS =-2.5V,ID =-3A | 3.3 | 6 | nC | |||
| Gate-source charge | Qgs | 0.7 | nC | |||
| Gate-drain charge | Qgd | 1.3 | nC | |||
| Gate resistance | Rg | f =1MHz | 6.0 | |||
| Turn-on delay time | td(on) | VDD=-10V, RL=10, ID =-1A, VGEN=-4.5V,Rg=1 | 11 | 20 | ns | |
| Rise time | tr | 35 | 60 | ns | ||
| Turn-off delay time | td(off) | 30 | 50 | ns | ||
| Fall time | tf | 10 | 20 | ns | ||
| Drain-source body diode characteristics | ||||||
| Continuous source-drain diode current | IS | TC=25 | -1.3 | A | ||
| Pulse diode forward current | ISM | -10 | A | |||
| Body diode voltage | VSD | IS=-0.7A | -0.8 | -1.2 | V | |
2510101402_CBI-CB2301T-2-8A_C21714127.pdf
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