Silicon Planar Zener Diode CBI BZX84C13 SOT23 Package Voltage Regulation for Compact Electronics

Key Attributes
Model Number: BZX84C13
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
30Ω
Diode Configuration:
Independent
Zener Voltage(Range):
12.4V~14.1V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
13V
Mfr. Part #:
BZX84C13
Package:
SOT-23
Product Description

Product Overview

The BZX84CSeries Silicon Planar Zener Diodes are designed for voltage regulation in compact applications. Offered in the SOT-23 surface mount plastic package, these devices are ideal for high-density applications such as cellular phones, hand-held portables, and PC boards, providing voltage regulation with minimal space requirements.

Product Attributes

  • Package Type: SOT-23 Plastic Package
  • Diode Type: Silicon Planar Zener Diodes

Technical Specifications

Model Marking Code Zener Voltage Range (V) Nominal (V) Min. (V) Max. (V) Test Current (mA) Max. Dynamic Impedance () Max. Reverse Current (A) Forward Voltage (V)
BZX84C2V0 A8 2.0 V to 75 V 2 1.8 2.15 5 100 120 0.5
BZX84C2V2 B8 2.0 V to 75 V 2.2 2.08 2.33 5 100 120 0.7
BZX84C2V4 C8 2.0 V to 75 V 2.4 2.2 2.6 5 100 50 1
BZX84C2V7 D8 2.0 V to 75 V 2.7 2.5 2.9 5 15 20 1
BZX84C3V0 E8 2.0 V to 75 V 3 2.8 3.2 5 95 10 1
BZX84C3V3 F8 2.0 V to 75 V 3.3 3.1 3.5 5 95 5 1
BZX84C3V6 H8 2.0 V to 75 V 3.6 3.4 3.8 5 90 5 1
BZX84C3V9 J8 2.0 V to 75 V 3.9 3.7 4.1 5 90 3 1
BZX84C4V3 K8 2.0 V to 75 V 4.3 4 4.6 5 90 3 1
BZX84C4V7 M8 2.0 V to 75 V 4.7 4.4 5 5 80 3 2
BZX84C5V1 N8 2.0 V to 75 V 5.1 4.8 5.4 5 60 2 2
BZX84C5V6 P8 2.0 V to 75 V 5.6 5.2 6 5 40 1 2
BZX84C6V2 R8 2.0 V to 75 V 6.2 5.8 6.6 5 10 3 4
BZX84C6V8 X8 2.0 V to 75 V 6.8 6.4 7.2 5 15 2 4
BZX84C7V5 Y8 2.0 V to 75 V 7.5 7 7.9 5 15 1 5
BZX84C8V2 Z8 2.0 V to 75 V 8.2 7.7 8.7 5 15 0.7 5
BZX84C9V1 A9 2.0 V to 75 V 9.1 8.5 9.6 5 15 0.5 6
BZX84C10 B9 2.0 V to 75 V 10 9.4 10.6 5 20 0.2 7
BZX84C11 C9 2.0 V to 75 V 11 10.4 11.6 5 20 0.1 8
BZX84C12 D9 2.0 V to 75 V 12 11.4 12.7 5 25 0.1 8
BZX84C13 E9 2.0 V to 75 V 13 12.4 14.1 5 30 0.1 8
BZX84C15 F9 2.0 V to 75 V 15 13.8 15.6 5 30 0.05 10.5
BZX84C16 H9 2.0 V to 75 V 16 15.3 17.1 5 40 0.05 11.2
BZX84C18 J9 2.0 V to 75 V 18 16.8 19.1 5 45 0.05 12.6
BZX84C20 K9 2.0 V to 75 V 20 18.8 21.2 5 55 0.05 14
BZX84C22 M9 2.0 V to 75 V 22 20.8 23.3 5 55 0.05 15.4
BZX84C24 N9 2.0 V to 75 V 24 22.8 25.6 5 70 0.05 16.8
BZX84C27 P9 2.0 V to 75 V 27 25.1 28.9 2 80 0.05 18.9
BZX84C30 R9 2.0 V to 75 V 30 28 32 2 80 0.05 21
BZX84C33 X9 2.0 V to 75 V 33 31 35 2 80 0.05 23.1
BZX84C36 Y9 2.0 V to 75 V 36 34 38 2 90 0.05 25.2
BZX84C39 Z9 2.0 V to 75 V 39 37 41 2 130 0.05 27.3
BZX84C43 A0 2.0 V to 75 V 43 40 46 2 150 0.05 30.1
BZX84C47 B0 2.0 V to 75 V 47 44 50 2 170 0.05 32.9
BZX84C51 C0 2.0 V to 75 V 51 48 54 2 180 0.05 35.7
BZX84C56 D0 2.0 V to 75 V 56 52 60 2 200 0.05 39.2
BZX84C62 E0 2.0 V to 75 V 62 58 66 2 215 0.05 43.4
BZX84C68 F0 2.0 V to 75 V 68 64 72 2 240 0.05 47.6
BZX84C75 H0 2.0 V to 75 V 75 70 79 2 255 0.05 52.5
Parameter Symbol Value Unit
Power Dissipation PD 350 mW
Thermal Resistance, Junction to Ambient RJA 417 C/W
Junction and Storage Temperature Range Tj, Tstg -65 to +150 C
Anode Pin 1
Cathode Pin 3

Note: 1) Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina. Tested with pulses tp = 20 ms.


2410121234_CBI-BZX84C13_C2832557.pdf

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