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quality Plastic Encapsulated Zener Diode Medium Current Planar Die Construction CBI BZT52B7V5S Lead Free Version factory
quality Plastic Encapsulated Zener Diode Medium Current Planar Die Construction CBI BZT52B7V5S Lead Free Version factory

Plastic Encapsulated Zener Diode Medium Current Planar Die Construction CBI BZT52B7V5S Lead Free Version

Key Attributes
Model Number: BZT52B7V5S
Product Custom Attributes
Mfr. Part #:
BZT52B7V5S
Package:
SOD-323
Product Description

Product Overview

The BZT52BXXXS series of plastic-encapsulated Zener diodes are designed for general-purpose applications requiring medium current. Featuring a planar die construction, these diodes are ideally suited for automated assembly processes. They are available in a lead-free version, offering a wide Zener voltage range from 2.4V to 39V. The series is manufactured by Heyuan China Base Electronics Technology Co., Ltd.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Product Type: Zener Diode
  • Encapsulation: Plastic
  • Die Construction: Planar
  • Lead Free Version: Available

Technical Specifications

Type Number Type Code Nominal Zener Voltage (V) (VZ@IZT) Zener Voltage Min (V) Zener Voltage Max (V) Test Current (mA) (IZT) Maximum Zener Impedance () (ZZT@IZT) Maximum Reverse Current (A) (IR@VR) Typical Temperature Coefficient (mV/C) (VZ@IZTC) Forward Voltage (V) (VF @ IF = 10mA) Power Dissipation (mW) (Pd) Thermal Resistance (C/W) (RJA) Junction Temperature (C) (Tj) Storage Temperature Range (C) (Tstg)
BZT52B2V4S 2WX 2.4 2.35 2.45 5 100 50 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B2V7S 2W1 2.7 2.65 2.75 5 100 20 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B3V0S 2W2 3.0 2.94 3.06 5 95 10 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B3V3S 2W3 3.3 3.23 3.37 5 95 5 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B3V6S 2W4 3.6 3.53 3.67 5 90 5 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B3V9S 2W5 3.9 3.82 3.98 5 90 3 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B4V3S 2W6 4.3 4.21 4.39 5 90 3 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B4V7S 2W7 4.7 4.61 4.79 5 80 3 -3.5 0.9 200 625 150 -55 ~ +150
BZT52B5V1S 2W8 5.1 5.00 5.20 5 60 2 -2.7 0.9 200 625 150 -55 ~ +150
BZT52B5V6S 2W9 5.6 5.49 5.71 5 40 1 -2.0 0.9 200 625 150 -55 ~ +150
BZT52B6V2S 2WA 6.2 6.08 6.32 5 10 3 0.4 0.9 200 625 150 -55 ~ +150
BZT52B6V8S 2WB 6.8 6.66 6.94 5 15 2 1.2 0.9 200 625 150 -55 ~ +150
BZT52B7V5S 2WC 7.5 7.35 7.65 5 15 1 2.5 0.9 200 625 150 -55 ~ +150
BZT52B8V2S 2WD 8.2 8.04 8.36 5 15 0.7 3.2 0.9 200 625 150 -55 ~ +150
BZT52B9V1S 2WE 9.1 8.92 9.28 5 15 0.5 3.8 0.9 200 625 150 -55 ~ +150
BZT52B10S 2WF 10 9.80 10.20 5 20 0.2 4.5 0.9 200 625 150 -55 ~ +150
BZT52B11S 2WG 11 10.78 11.22 5 20 0.1 5.4 0.9 200 625 150 -55 ~ +150
BZT52B12S 2WH 12 11.76 12.24 5 25 0.1 6.0 0.9 200 625 150 -55 ~ +150
BZT52B13S 2WI 13 12.74 13.26 5 30 0.1 7.0 0.9 200 625 150 -55 ~ +150
BZT52B15S 2WJ 15 14.70 15.30 5 30 0.1 10.5 0.9 200 625 150 -55 ~ +150
BZT52B16S 2WK 16 15.68 16.32 5 40 0.1 11.2 0.9 200 625 150 -55 ~ +150
BZT52B18S 2WL 18 17.64 18.36 5 45 0.1 12.6 0.9 200 625 150 -55 ~ +150
BZT52B20S 2WM 20 19.60 20.40 5 55 0.1 14.0 0.9 200 625 150 -55 ~ +150
BZT52B22S 2WN 22 21.56 22.44 5 55 0.1 15.4 0.9 200 625 150 -55 ~ +150
BZT52B24S 2WO 24 23.52 24.48 5 70 0.1 16.8 0.9 200 625 150 -55 ~ +150
BZT52B27S 2WP 27 26.46 27.54 2 80 0.1 18.9 0.9 200 625 150 -55 ~ +150
BZT52B30S 2WQ 30 29.40 30.60 2 80 0.1 21.0 0.9 200 625 150 -55 ~ +150
BZT52B33S 2WR 33 32.34 33.66 2 80 0.1 23.1 0.9 200 625 150 -55 ~ +150
BZT52B36S 2WS 36 35.28 36.72 2 90 0.1 25.2 0.9 200 625 150 -55 ~ +150
BZT52B39S 2WT 39 38.22 39.78 2 130 0.1 27.3 0.9 200 625 150 -55 ~ +150

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. f = 1kHz.

Current Product Availability: Our company currently provides 5.1 V - 20 V products only.


2510101615_CBI-BZT52B7V5S_C51315190.pdf

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