SOT-23 Package Silicon Planar Zener Diodes Featuring CBI MMBZ5235B for Voltage Regulation Performance

Key Attributes
Model Number: MMBZ5235B
Product Custom Attributes
Mfr. Part #:
MMBZ5235B
Package:
SOT-23
Product Description

Product Overview

This document details SILICON PLANAR ZENER DIODES in a SOT-23 Plastic Package. These diodes are designed for various applications requiring precise voltage regulation. Key characteristics include a wide Zener Voltage Range, Max. Dynamic Resistance, Max. Reverse Current, and specific Type Marking Codes for easy identification. They are manufactured by Heyuan China Base Electronics Technology Co., Ltd.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-23 Plastic Package
  • Material: Silicon Planar

Technical Specifications

Type Marking Code Nominal Zener Voltage (Vznom) (V) Zener Voltage Tolerance (VZT at IZT) (V) Test Current (IZT) (mA) Max. Dynamic Resistance (ZZT at IZT) () Max. Reverse Current (ZZK at IZK) () Reverse Current (IR at VR) (A) Forward Voltage (VF at IF = 10 mA) (V)
Y0 2.4 2.282.52 20 30 20 1200 0.25
Z0 2.7 2.572.84 20 30 20 1300 0.25
AA 3 2.853.15 20 30 20 1600 0.25
AB 3.3 3.143.47 20 28 20 1600 0.25
AC 3.6 3.423.78 20 24 20 1700 0.25
AD 3.9 3.714.1 20 23 20 1900 0.25
AE 4.3 4.094.52 20 22 20 2000 0.25
AF 4.7 4.474.94 20 19 20 1900 0.25
AH 5.1 4.855.36 20 17 20 1600 0.25
AJ 5.6 5.325.88 20 11 20 1600 0.25
AK 6 5.7...6.3 20 7 20 1600 0.25
AM 6.2 5.896.51 20 7 20 1000 0.25
AN 6.8 6.467.14 20 5 20 750 0.25
AP 7.5 7.137.88 20 6 20 500 0.25
AR 8.2 7.798.61 20 8 20 500 0.25
AY 9.1 8.659.56 20 10 20 600 0.25
AZ 10 9.510.5 20 17 20 600 0.25
BA 11 10.4511.55 20 22 20 600 0.25
BB 12 11.412.6 20 30 20 600 0.25
BC 13 12.3513.65 9.5 13 9.5 600 0.25
BE 15 14.2515.75 8.5 16 8.5 600 0.25
BF 16 15.216.8 7.8 17 7.8 600 0.25
BH 17 16.15...17.85 7.4 19 7.4 600 0.25
BJ 18 17.118.9 7 21 7 600 0.25
BK 19 18.0519.95 6.6 23 6.6 600 0.25
BM 20 1921 6.2 25 6.2 600 0.25
BN 22 20.923.1 5.6 29 5.6 600 0.25
BP 24 22.825.2 5.2 33 5.2 600 0.25
BR 25 23.7526.25 5 35 5 600 0.25
BX 27 25.6528.35 4.6 41 4.6 600 0.25
BZ 30 28.531.5 4.2 49 4.2 600 0.25
CA 33 31.3534.65 3.8 58 3.8 700 0.25
CB 36 34.237.8 3.4 70 3.4 700 0.25
CC 39 37.0540.95 3.2 80 3.2 800 0.25
CD 43 40.8545.15 3 93 3 800 0.25
CE 47 44.6549.35 2.7 105 2.7 1000 0.25
Parameter Symbol Value Unit
Power Dissipation PD 350 mW
Thermal Resistance, Junction to Ambient RJA 357 OC/W
Junction Temperature Tj 150 OC
Storage Temperature Range Tstg - 55 to + 150 OC

Note: 1) Tested with pulses tp = 20 ms.


2510101615_CBI-MMBZ5235B_C51315442.pdf

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