Silicon Planar Zener Diode with 500 Milliwatt Power Dissipation CBI BZT52C11W SOD123 Package
Product Overview
The BZT52C...W series are silicon planar Zener diodes ideally suited for automated assembly processes. These diodes offer a total power dissipation of up to 500 mW and are designed for applications requiring precise voltage regulation.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon planar
- Package Type: SOD-123
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | ||||
| Power Dissipation | Ptot | 500 | mW | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature Range | TStg | -65 to +150 | C | |
| Characteristics (Ta = 25 C) | ||||
| Thermal Resistance Junction to Ambient Air | RthA | 340 | C/W | |
| Forward Voltage at IF = 10 mA | VF | 0.9 | V | |
| Zener Voltage Range & Characteristics (Ta = 25 C) | ||||
| Type | Vznom | V (Nominal) | V | IZT (mA) |
| BZT52C2V4W | 2.4 | 2.2...2.6 | V | 5 |
| BZT52C2V7W | 2.7 | 2.5...2.9 | V | 5 |
| BZT52C3V0W | 3.0 | 2.8...3.2 | V | 5 |
| BZT52C3V3W | 3.3 | 3.1...3.5 | V | 5 |
| BZT52C3V6W | 3.6 | 3.4...3.8 | V | 5 |
| BZT52C3V9W | 3.9 | 3.7...4.1 | V | 5 |
| BZT52C4V3W | 4.3 | 4...4.6 | V | 5 |
| BZT52C4V7W | 4.7 | 4.4...5 | V | 5 |
| BZT52C5V1W | 5.1 | 4.8...5.4 | V | 5 |
| BZT52C5V6W | 5.6 | 5.2...6 | V | 5 |
| BZT52C6V2W | 6.2 | 5.8...6.6 | V | 5 |
| BZT52C6V8W | 6.8 | 6.4...7.2 | V | 5 |
| BZT52C7V5W | 7.5 | 7...7.9 | V | 5 |
| BZT52C8V2W | 8.2 | 7.7...8.7 | V | 5 |
| BZT52C9V1W | 9.1 | 8.5...9.6 | V | 5 |
| BZT52C10W | 10 | 9.4...10.6 | V | 5 |
| BZT52C11W | 11 | 10.4...11.6 | V | 5 |
| BZT52C12W | 12 | 11.4...12.7 | V | 5 |
| BZT52C13W | 13 | 12.4...14.1 | V | 5 |
| BZT52C15W | 15 | 13.8...15.6 | V | 5 |
| BZT52C16W | 16 | 15.3...17.1 | V | 5 |
| BZT52C18W | 18 | 16.8...19.1 | V | 5 |
| BZT52C20W | 20 | 18.8...21.2 | V | 5 |
| BZT52C22W | 22 | 20.8...23.3 | V | 5 |
| BZT52C24W | 24 | 22.8...25.6 | V | 5 |
| BZT52C27W | 27 | 25.1...28.9 | V | 2 |
| BZT52C30W | 30 | 28...32 | V | 2 |
| BZT52C33W | 33 | 31...35 | V | 2 |
| BZT52C36W | 36 | 34...38 | V | 2 |
| BZT52C39W | 39 | 37...41 | V | 2 |
| Dynamic Impedance (at IZT) | ||||
| ZZT (Max.) | See table above | |||
| ZZK (Max.) | See table above | |||
| Reverse Leakage Current (at VR) | ||||
| IR (Max.) | See table above | A | ||
| Type Marking Code | ||||
| Code | V | |||
| MH | 2.4 | |||
| MJ | 2.7 | |||
| MK | 3.0 | |||
| MM | 3.3 | |||
| MN | 3.6 | |||
| MP | 3.9 | |||
| MR | 4.3 | |||
| MX | 4.7 | |||
| MY | 5.1 | |||
| MZ | 5.6 | |||
| NA | 6.2 | |||
| NB | 6.8 | |||
| NC | 7.5 | |||
| ND | 8.2 | |||
| NE | 9.1 | |||
| NF | 10 | |||
| NH | 11 | |||
| NJ | 12 | |||
| NK | 13 | |||
| NM | 15 | |||
| NN | 16 | |||
| NP | 18 | |||
| NR | 20 | |||
| NX | 22 | |||
| NY | 24 | |||
| NZ | 27 | |||
| PA | 30 | |||
| PB | 33 | |||
| PC | 36 | |||
| PD | 39 | |||
Note: VZ is tested with pulses (20 ms).
2410121236_CBI-BZT52C11W_C2832630.pdf
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