SOT23 Package Silicon Planar Zener Diode CBI BZX84C18 for Voltage Regulation in Portable Electronics

Key Attributes
Model Number: BZX84C18
Product Custom Attributes
Operating Junction Temperature Range:
-65℃~+150℃
Impedance(Zzt):
45Ω
Diode Configuration:
Independent
Zener Voltage(Range):
16.8V~19.1V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
18V
Mfr. Part #:
BZX84C18
Package:
SOT-23
Product Description

Product Overview

The BZX84CSeries Silicon Planar Zener Diodes are designed for voltage regulation in compact applications. Offered in the SOT-23 surface mount plastic package, these diodes are ideal for space-constrained designs such as cellular phones, handheld portables, and high-density PC boards. They provide a Zener breakdown voltage range from 2.0 V to 75 V, with a package optimized for automated board assembly.

Product Attributes

  • Package Type: SOT-23 Plastic Package
  • Material: Silicon Planar

Technical Specifications

Series Type Marking Code Nominal Zener Voltage (Vz) (V) Minimum Zener Voltage (V) Maximum Zener Voltage (V) Test Current (IzT) (mA) Maximum Dynamic Impedance (ZZT) () Reverse Current (IR) (A) Forward Voltage (VF) (V)
BZX84C A8 2.0 1.8 2.15 5 100 120 0.5
BZX84C B8 2.2 2.08 2.33 5 100 120 0.7
BZX84C C8 2.4 2.2 2.6 5 100 50 1
BZX84C D8 2.7 2.5 2.9 5 100 20 1
BZX84C E8 3.0 2.8 3.2 5 95 10 1
BZX84C F8 3.3 3.1 3.5 5 95 5 1
BZX84C H8 3.6 3.4 3.8 5 90 5 1
BZX84C J8 3.9 3.7 4.1 5 90 3 1
BZX84C K8 4.3 4 4.6 5 90 3 1
BZX84C M8 4.7 4.4 5 5 80 3 2
BZX84C N8 5.1 4.8 5.4 5 60 2 2
BZX84C P8 5.6 5.2 6 5 40 1 2
BZX84C R8 6.2 5.8 6.6 5 10 3 4
BZX84C X8 6.8 6.4 7.2 5 15 2 4
BZX84C Y8 7.5 7 7.9 5 15 1 5
BZX84C Z8 8.2 7.7 8.7 5 15 0.7 5
BZX84C A9 9.1 8.5 9.6 5 15 0.5 6
BZX84C B9 10 9.4 10.6 5 20 0.2 7
BZX84C C9 11 10.4 11.6 5 20 0.1 8
BZX84C D9 12 11.4 12.7 5 25 0.1 8
BZX84C E9 13 12.4 14.1 5 30 0.1 8
BZX84C F9 15 13.8 15.6 5 30 0.05 10.5
BZX84C H9 16 15.3 17.1 5 40 0.05 11.2
BZX84C J9 18 16.8 19.1 5 45 0.05 12.6
BZX84C K9 20 18.8 21.2 5 55 0.05 14
BZX84C M9 22 20.8 23.3 5 55 0.05 15.4
BZX84C N9 24 22.8 25.6 5 70 0.05 16.8
BZX84C P9 27 25.1 28.9 2 80 0.05 18.9
BZX84C R9 30 28 32 2 80 0.05 21
BZX84C X9 33 31 35 2 80 0.05 23.1
BZX84C Y9 36 34 38 2 90 0.05 25.2
BZX84C Z9 39 37 41 2 130 0.05 27.3
BZX84C A0 43 40 46 2 150 0.05 30.1
BZX84C B0 47 44 50 2 170 0.05 32.9
BZX84C C0 51 48 54 2 180 0.05 35.7
BZX84C D0 56 52 60 2 200 0.05 39.2
BZX84C E0 62 58 66 2 215 0.05 43.4
BZX84C F0 68 64 72 2 240 0.05 47.6
BZX84C H0 75 70 79 2 255 0.05 52.5
Parameter Symbol Value Unit
Power Dissipation PD 350 mW
Thermal Resistance, Junction to Ambient 1) RJA 417 C/W
Junction and Storage Temperature Range Tj, Tstg -65 to +150 C

1) Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina

1) Tested with pulses tp = 20 ms.


2410121234_CBI-BZX84C18_C2832560.pdf

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