Medium current plastic encapsulate diode CBI BZT52B27S with planar die design and lead free options
Key Attributes
Model Number:
BZT52B27S
Product Custom Attributes
Mfr. Part #:
BZT52B27S
Package:
SOD-323
Product Description
Product Overview
The Zener Diode series features a planar die construction, making it ideally suited for general-purpose, medium current applications and automated assembly processes. Available in lead-free versions, these diodes offer reliable performance with a wide range of Zener voltage options from 2.4V to 39V.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Product Type: Plastic-Encapsulate Diodes
- Construction: Planar Die
- Availability: Lead Free Version
Technical Specifications
General Characteristics:
| Characteristic | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Forward Voltage | VF | 0.9 | V | @ IF = 10mA |
| Power Dissipation | PD | 200 | mW | (Note 1) |
| Thermal Resistance (Junction to Ambient) | RJA | 625 | /W | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55 ~ +150 |
Zener Voltage Range:
| Type Number | Type Code | Nominal Zener Voltage (VZ) | Min. Zener Voltage (VZ) | Max. Zener Voltage (VZ) | Test Current (IZT) | Max. Zener Impedance (ZZT) | Max. Reverse Current (IR) | Typical Temperature Coefficient (@IZTC) | Test Current (IZTC) | Unit |
|---|---|---|---|---|---|---|---|---|---|---|
| BZT52B2V4S | 2WX | 2.4 | 2.35 | 2.45 | 5 | 100 | 1.0 | -3.5 | 50 | A |
| BZT52B2V7S | 2W1 | 2.7 | 2.65 | 2.75 | 5 | 100 | 1.0 | -3.5 | 20 | A |
| BZT52B3V0S | 2W2 | 3.0 | 2.94 | 3.06 | 5 | 95 | 1.0 | -3.5 | 10 | A |
| BZT52B3V3S | 2W3 | 3.3 | 3.23 | 3.37 | 5 | 95 | 1.0 | -3.5 | 5 | A |
| BZT52B3V6S | 2W4 | 3.6 | 3.53 | 3.67 | 5 | 90 | 1.0 | -3.5 | 5 | A |
| BZT52B3V9S | 2W5 | 3.9 | 3.82 | 3.98 | 5 | 90 | 1.0 | -3.5 | 3 | A |
| BZT52B4V3S | 2W6 | 4.3 | 4.21 | 4.39 | 5 | 90 | 1.0 | -3.5 | 3 | A |
| BZT52B4V7S | 2W7 | 4.7 | 4.61 | 4.79 | 5 | 80 | 2.0 | -3.5 | 0.2 | mA |
| BZT52B5V1S | 2W8 | 5.1 | 5.00 | 5.20 | 5 | 60 | 2.0 | -2.7 | 1.2 | mA |
| BZT52B5V6S | 2W9 | 5.6 | 5.49 | 5.71 | 5 | 40 | 2.0 | -2.0 | 2.5 | mA |
| BZT52B6V2S | 2WA | 6.2 | 6.08 | 6.32 | 5 | 10 | 4.0 | 0.4 | 3.7 | mA |
| BZT52B6V8S | 2WB | 6.8 | 6.66 | 6.94 | 5 | 15 | 4.0 | 1.2 | 4.5 | mA |
| BZT52B7V5S | 2WC | 7.5 | 7.35 | 7.65 | 5 | 15 | 5.0 | 2.5 | 5.3 | mA |
| BZT52B8V2S | 2WD | 8.2 | 8.04 | 8.36 | 5 | 15 | 5.0 | 3.2 | 6.2 | mA |
| BZT52B9V1S | 2WE | 9.1 | 8.92 | 9.28 | 5 | 15 | 6.0 | 3.8 | 7.0 | mA |
| BZT52B10S | 2WF | 10 | 9.80 | 10.20 | 5 | 20 | 7.0 | 4.5 | 8.0 | mA |
| BZT52B11S | 2WG | 11 | 10.78 | 11.22 | 5 | 20 | 8.0 | 5.4 | 9.0 | mA |
| BZT52B12S | 2WH | 12 | 11.76 | 12.24 | 5 | 25 | 8.0 | 6.0 | 10.0 | mA |
| BZT52B13S | 2WI | 13 | 12.74 | 13.26 | 5 | 30 | 8.0 | 7.0 | 11.0 | mA |
| BZT52B15S | 2WJ | 15 | 14.70 | 15.30 | 5 | 30 | 10.5 | 9.2 | 13.0 | mA |
| BZT52B16S | 2WK | 16 | 15.68 | 16.32 | 5 | 40 | 11.2 | 10.4 | 14.0 | mA |
| BZT52B18S | 2WL | 18 | 17.64 | 18.36 | 5 | 45 | 12.6 | 12.4 | 16.0 | mA |
| BZT52B20S | 2WM | 20 | 19.60 | 20.40 | 5 | 55 | 14.0 | 14.4 | 18.0 | mA |
| BZT52B22S | 2WN | 22 | 21.56 | 22.44 | 5 | 55 | 15.4 | 16.4 | 20.0 | mA |
| BZT52B24S | 2WO | 24 | 23.52 | 24.48 | 5 | 70 | 16.8 | 18.4 | 22.0 | mA |
| BZT52B27S | 2WP | 27 | 26.46 | 27.54 | 2 | 80 | 18.9 | 21.4 | 25.3 | mA |
| BZT52B30S | 2WQ | 30 | 29.40 | 30.60 | 2 | 80 | 21.0 | 24.4 | 29.4 | mA |
| BZT52B33S | 2WR | 33 | 32.34 | 33.66 | 2 | 80 | 23.1 | 27.4 | 33.4 | mA |
| BZT52B36S | 2WS | 36 | 35.28 | 36.72 | 2 | 90 | 25.2 | 30.4 | 37.4 | mA |
| BZT52B39S | 2WT | 39 | 38.22 | 39.78 | 2 | 130 | 27.3 | 33.4 | 41.2 | mA |
Notes:
- 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
- 2. Short duration test pulse used to minimize self-heating effect.
- 3. f = 1kHz.
- The company currently provides 5.1 V - 20 V products only.
2510101615_CBI-BZT52B27S_C51315178.pdf
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