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quality Lead Free Zener Diode CBI BZT52B11S Plastic Encapsulated Planar Die Construction for Medium Current factory
quality Lead Free Zener Diode CBI BZT52B11S Plastic Encapsulated Planar Die Construction for Medium Current factory

Lead Free Zener Diode CBI BZT52B11S Plastic Encapsulated Planar Die Construction for Medium Current

Key Attributes
Model Number: BZT52B11S
Product Custom Attributes
Mfr. Part #:
BZT52B11S
Package:
SOD-323
Product Description

Product Overview

The Zener Diode series features a planar die construction, making it ideally suited for general purpose, medium current applications and automated assembly processes. These diodes are available in a lead-free version, offering a reliable solution for various electronic circuits requiring precise voltage regulation. They are designed for efficient performance and are suitable for a wide range of industrial and commercial applications.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Product Type: Plastic-Encapsulated Zener Diode
  • Construction: Planar Die
  • Availability: Lead Free Version

Technical Specifications

Type Number Type Code Nominal Zener Voltage (V) Zener Voltage Min (V) Zener Voltage Max (V) Test Current (mA) Maximum Zener Impedance () @ IZT Maximum Reverse Current (A) @ VR Forward Voltage (V) @ IF = 10mA Power Dissipation (mW) Thermal Resistance (C/W) Junction Temperature (C) Storage Temperature Range (C) Typical Temperature Coefficient (mV/C) @ IZTC
BZT52B2V4S 2WX 2.4 2.35 2.45 5 600 50 0.9 200 625 150 -55 ~ +150 -3.5
BZT52B2V7S 2W1 2.7 2.65 2.75 5 600 20 0.9 200 625 150 -55 ~ +150 -3.5
BZT52B3V0S 2W2 3.0 2.94 3.06 5 600 10 0.9 200 625 150 -55 ~ +150 -3.5
BZT52B3V3S 2W3 3.3 3.23 3.37 5 600 5 0.9 200 625 150 -55 ~ +150 -3.5
BZT52B3V6S 2W4 3.6 3.53 3.67 5 600 5 0.9 200 625 150 -55 ~ +150 -3.5
BZT52B3V9S 2W5 3.9 3.82 3.98 5 600 3 0.9 200 625 150 -55 ~ +150 -3.5
BZT52B4V3S 2W6 4.3 4.21 4.39 5 600 3 0.9 200 625 150 -55 ~ +150 -3.5
BZT52B4V7S 2W7 4.7 4.61 4.79 5 500 3 0.9 200 625 150 -55 ~ +150 -3.5
BZT52B5V1S 2W8 5.1 5.00 5.20 5 480 2 0.9 200 625 150 -55 ~ +150 -2.7
BZT52B5V6S 2W9 5.6 5.49 5.71 5 400 1 0.9 200 625 150 -55 ~ +150 -2.0
BZT52B6V2S 2WA 6.2 6.08 6.32 5 150 3 0.9 200 625 150 -55 ~ +150 0.4
BZT52B6V8S 2WB 6.8 6.66 6.94 5 80 2 0.9 200 625 150 -55 ~ +150 1.2
BZT52B7V5S 2WC 7.5 7.35 7.65 5 80 1 0.9 200 625 150 -55 ~ +150 2.5
BZT52B8V2S 2WD 8.2 8.04 8.36 5 80 0.7 0.9 200 625 150 -55 ~ +150 3.2
BZT52B9V1S 2WE 9.1 8.92 9.28 5 100 0.5 0.9 200 625 150 -55 ~ +150 3.8
BZT52B10S 2WF 10 9.80 10.20 5 150 0.2 0.9 200 625 150 -55 ~ +150 4.5
BZT52B11S 2WG 11 10.78 11.22 5 150 0.1 0.9 200 625 150 -55 ~ +150 5.4
BZT52B12S 2WH 12 11.76 12.24 5 150 0.1 0.9 200 625 150 -55 ~ +150 6.0
BZT52B13S 2WI 13 12.74 13.26 5 170 0.1 0.9 200 625 150 -55 ~ +150 7.0
BZT52B15S 2WJ 15 14.70 15.30 5 200 0.1 0.9 200 625 150 -55 ~ +150 9.2
BZT52B16S 2WK 16 15.68 16.32 5 200 0.1 0.9 200 625 150 -55 ~ +150 10.4
BZT52B18S 2WL 18 17.64 18.36 5 225 0.1 0.9 200 625 150 -55 ~ +150 12.4
BZT52B20S 2WM 20 19.60 20.40 5 225 0.1 0.9 200 625 150 -55 ~ +150 14.4
BZT52B22S 2WN 22 21.56 22.44 5 250 0.1 0.9 200 625 150 -55 ~ +150 16.4
BZT52B24S 2WO 24 23.52 24.48 5 250 0.1 0.9 200 625 150 -55 ~ +150 18.4
BZT52B27S 2WP 27 26.46 27.54 2 300 0.1 0.9 200 625 150 -55 ~ +150 21.4
BZT52B30S 2WQ 30 29.40 30.60 2 300 0.1 0.9 200 625 150 -55 ~ +150 24.4
BZT52B33S 2WR 33 32.34 33.66 2 325 0.1 0.9 200 625 150 -55 ~ +150 27.4
BZT52B36S 2WS 36 35.28 36.72 2 350 0.1 0.9 200 625 150 -55 ~ +150 30.4
BZT52B39S 2WT 39 38.22 39.78 2 350 0.1 0.9 200 625 150 -55 ~ +150 33.4

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. f = 1kHz.

Current Availability: 5.1 V - 20 V products only.


2510101615_CBI-BZT52B11S_C51315171.pdf

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