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quality Surface Mount Silicon Planar Zener Diodes CBI MM1Z33 with Voltage Regulation and 500 Milliwatt Power factory
quality Surface Mount Silicon Planar Zener Diodes CBI MM1Z33 with Voltage Regulation and 500 Milliwatt Power factory

Surface Mount Silicon Planar Zener Diodes CBI MM1Z33 with Voltage Regulation and 500 Milliwatt Power

Key Attributes
Model Number: MM1Z33
Product Custom Attributes
Pd - Power Dissipation:
500mW
Mfr. Part #:
MM1Z33
Package:
SOD-123
Product Description

Product Overview

Silicon Planar Zener Diodes designed for surface-mounted applications. These diodes offer a total power dissipation of up to 500 mW and are available with a tolerance of approximately 5%. They are suitable for various electronic circuits requiring stable voltage reference.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Silicon Planar
  • Package Type: SOD-123

Technical Specifications

Model Marking Code Zener Voltage (VZ) (V) Tolerance (VZ) (%) Test Current (IZ) (mA) Dynamic Impedance (ZZT) () Reverse Leakage Current (IR) (A) Forward Voltage (VF) (V)
MM1Z2V0 4A 2.0 1.8...2.15 5 100 5 0.5
MM1Z2V2 4B 2.2 2.08...2.33 5 100 5 0.7
MM1Z2V4 4C 2.4 2.28...2.56 5 100 5 1
MM1Z2V7 4D 2.7 2.5...2.9 5 110 5 1
MM1Z3V0 4E 3.0 2.8...3.2 5 120 5 1
MM1Z3V3 4F 3.3 3.1...3.5 5 130 5 1
MM1Z3V6 4H 3.6 3.4...3.8 5 130 5 1
MM1Z3V9 4J 3.9 3.7...4.1 5 130 5 1
MM1Z4V3 4K 4.3 4...4.6 5 130 5 1
MM1Z4V7 4M 4.7 4.4...5 5 130 5 1
MM1Z5V1 4N 5.1 4.8...5.4 5 130 5 1.5
MM1Z5V6 4P 5.6 5.2...6 5 80 5 2.5
MM1Z6V2 4R 6.2 5.8...6.6 5 50 5 3
MM1Z6V8 4X 6.8 6.4...7.2 5 30 5 3.5
MM1Z7V5 4Y 7.5 7...7.9 5 30 5 4
MM1Z8V2 4Z 8.2 7.7...8.7 5 30 5 5
MM1Z9V1 5A 9.1 8.5...9.6 5 30 5 6
MM1Z10 5B 10 9.4...10.6 5 30 5 7
MM1Z11 5C 11 10.4...11.6 5 30 5 8
MM1Z12 5D 12 11.4...12.7 5 35 5 9
MM1Z13 5E 13 12.4...14.1 5 35 5 10
MM1Z14 6J 14 13.2...14.9 5 35 5 10
MM1Z15 5F 15 13.8...15.6 5 40 5 11
MM1Z16 5H 16 15.3...17.1 5 40 5 12
MM1Z18 5J 18 16.8...19.1 5 45 5 13
MM1Z20 5K 20 18.8...21.2 5 50 5 15
MM1Z22 5M 22 20.8...23.3 5 55 5 17
MM1Z24 5N 24 22.8...25.6 5 60 5 19
MM1Z27 5P 27 25.1...28.9 2 70 2 21
MM1Z30 5R 30 28...32 2 80 2 23
MM1Z33 5X 33 31...35 2 80 2 25
MM1Z36 5Y 36 34...38 2 90 2 27
MM1Z39 5Z 39 37...41 2 100 2 30
MM1Z43 6A 43 40...46 2 130 2 33
MM1Z47 6B 47 44...50 2 150 2 36
MM1Z51 6C 51 48...54 2 180 2 39
MM1Z56 6D 56 52...60 2 180 2 43
MM1Z62 6E 62 58...66 2 200 2 47
MM1Z68 6F 68 64...72 2 250 2 52
MM1Z75 6H 75 70...79 2 300 2 57
Parameter Symbol Value Unit
Power Dissipation Ptot 500 mW
Junction Temperature TJ 150 C
Storage Temperature Range TStg -55 to +150 C
Thermal Resistance Junction to Ambient Air RthA 340 C/W
Forward Voltage at IF = 10 mA VF 0.9 V
Dimension Symbol Min Max Unit
A 0.95 1.15
A1 0.01 0.100
B 1.55 1.65
bp 0.50 0.70
C 0.09 0.150
E 2.60 2.70
HE 3.45 3.85
Lp 0.20 0.45
0 5

2410121321_CBI-MM1Z33_C21714164.pdf

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